DMN63D8LDW-7

Part points

• The DMN63D8LDW-7 chip is a low-power RF transceiver designed for wireless communication applications. It operates in the frequency range of 420 MHz to 475 MHz and 850 MHz to 940 MHz, making it suitable for various communication systems. This chip offers high performance, low power consumption, and reliable data transmission, making it ideal for IoT devices, remote control systems, and wireless sensor networks.

• Equivalent

  The equivalent products of DMN63D8LDW-7 chip are IRF644B, STD6N62K3, and STD8N80K5. These are all power MOSFETs with similar specifications and performance characteristics.

• Features

  DMN63D8LDW-7 is a power MOSFET transistor with a drain-source voltage of 63V, drain current of 50A, and low on-resistance of 8 mΩ. It is designed for high efficiency power management applications, with a compact and surface-mountable DFN package.

• Pinout

  The DMN63D8LDW-7 is a dual N-channel MOSFET with a pin count of 8. The functions of the pins are Gate 1, Source 1, Drain 1, Source 2, Drain 2, Gate 2, NC (No Connection), and NC (No Connection). It is commonly used in power management applications.

• Manufacturer

  The manufacturer of DMN63D8LDW-7 is Panasonic Corporation, a multinational corporation that specializes in electronics, home appliances, and automotive products. Panasonic is a leading manufacturer known for its innovative technologies and high-quality products.

• Application Field

  DMN63D8LDW-7 is commonly used in high power, low resistance applications such as power management modules, load switches, and battery protection circuits in consumer electronics, automotive systems, and industrial applications. Its small footprint and low on-state resistance make it ideal for high current applications where low power dissipation is critical.

• Package

  The DMN63D8LDW-7 chip is in a DFN-8 package type with a size of 3mm x 3mm. It is a dual N-channel MOSFET with a maximum current rating of 2.8A and a voltage rating of 60V.