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Infineon BSM50GX120DN2
Integrated Circuit Dual 4X1 16TSSOP Multiplexer
Marcas: Infineon
Parte do fabricante #: BSM50GX120DN2
Ficha de dados: BSM50GX120DN2 Ficha de dados (PDF)
Pacote/Caso: MODULE
Tipo de Produto: IGBT Modules
Status RoHS:
Condição de estoque: 9321 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaBSM50GX120DN2 Descrição geral
The BSM50GX120DN2 is a power semiconductor module developed by the Infineon Technologies company. It is part of the IGBT (Insulated Gate Bipolar Transistor) modules series and is designed for use in high-power applications such as industrial drives, wind power systems, and other renewable energy systems.The BSM50GX120DN2 has a voltage rating of 1200V and a maximum current rating of 50A, making it suitable for high-power applications where efficient power switching is critical. The module utilizes advanced IGBT technology to provide high efficiency and reliability, reducing power losses and improving overall system performance.The module features low switching losses and a compact design, making it suitable for a wide range of applications where space is limited. It also includes built-in temperature monitoring and protection features to ensure safe operation under various operating conditions.
Características
- IGBT module
- High speed switching
- Low thermal resistance
- 1200V voltage rating
- 50A current rating
- Compact design
- Optimized for motor control applications
- Integrated temperature sensor
Aplicativo
- Industrial motor drives
- Renewable energy systems
- Uninterruptible power supplies
- Electric vehicle drives
- Welding equipment
- Power factor correction systems
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Full Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.2 V |
| Continuous Collector Current at 25 C | 50 A | Gate-Emitter Leakage Current | 300 nA |
| Pd - Power Dissipation | 360 W | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C | Brand | Infineon Technologies |
| Maximum Gate Emitter Voltage | 20 V | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Part # Aliases | BSM50GX120DN2BOSA1 SP000100372 BSM50GX120DN2BOSA1 |
| Unit Weight | 7 oz |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The BSM50GX120DN2 chip is a power module designed for use in industrial and automotive applications. It is a fast-switching, high voltage device capable of handling high currents. The chip features low losses and a compact design, making it suitable for space-constrained applications. It offers efficient power conversion and is typically used in motor drives, welding equipment, and renewable energy systems.
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Equivalent
Equivalent products of the BSM50GX120DN2 chip include the FF300R12KE3, SKM50GB123D, and MG50G6EL1. These chips are similar in terms of specifications and can be used as alternative options for applications requiring a similar power module. -
Features
The BSM50GX120DN2 is a power module with a voltage rating of 1200V and a current rating of 50A. It has low on-resistance and low inductance, making it suitable for high power applications. The module is designed for use in industrial drives, welding equipment, and renewable energy systems. -
Pinout
The BSM50GX120DN2 is a power semiconductor module with a pin count of 8. Its functions include high power-switching applications, such as motor drives or inverters, as well as high-frequency switching, high surge current capability, and low on-state losses. -
Manufacturer
The manufacturer of the BSM50GX120DN2 is Mitsubishi Electric. It is a multinational company specializing in electrical and electronic equipment, including power systems, industrial automation, and home appliances. Mitsubishi Electric is known for its high-quality products, innovative technology, and commitment to sustainability. -
Application Field
The BSM50GX120DN2 is a power module commonly used in industrial applications, particularly in motor drives, HVAC systems, and renewable energy systems. It offers high power density, high efficiency, and reliable performance. -
Package
The BSM50GX120DN2 chip has a package type of IGBT module, a form of insulated gate bipolar transistor module, and a size that is designed to fit standard module packaging.
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A quantidade mínima de pedido começa em 1 unidade.
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