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$5000APT50M50JVFR
High voltage switching component
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Marcas: Microchip
Parte do fabricante #: APT50M50JVFR
Ficha de dados: APT50M50JVFR Ficha de dados (PDF)
Pacote/Caso: SOT-227-4
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 6.305 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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APT50M50JVFR Descrição geral
The APT50M50JVFR is a high-power RF gallium-nitride (GaN) transistor designed for use in radar and communication applications. It operates in the frequency range of 400-1000 MHz and delivers a typical output power of 50W with a gain of 15 dB and efficiency of 65%. The transistor is housed in a compact and rugged flange-mount package for easy integration into RF systems. It features a drain voltage of 50V and a maximum drain current of 6A, making it suitable for high-power amplification in various RF applications.The APT50M50JVFR offers excellent linearity and ruggedness, making it ideal for demanding RF applications that require high power output and efficiency. Its advanced GaN technology allows for improved performance compared to traditional silicon transistors, with lower on-resistance and higher breakdown voltage. The transistor also includes built-in protection features such as over-temperature and over-voltage protection to ensure reliable operation in harsh environments.
Características
- Sturdy frame for heavy-duty use
- Tough and resistant to scratches
- Fully assembled out of box
- Adjustable handle for comfortable grip
- Durable wheels for smooth ride
- Padded base for added protection
Aplicativo
- Advanced power technology
- Efficient motor control
- Medical device applications
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 22 - 103 |
Package Type(s) | D3PAK, SOT-227, T-MAX, TO-247, TO-264 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The APT50M50JVFR is a high power, high voltage RF power MOSFET chip designed for use in RF and microwave applications. With a maximum output power of 50 watts and a voltage rating of 500 volts, this chip offers excellent performance and reliability in high power RF systems. Its compact size and low thermal resistance make it ideal for use in a wide range of applications, including radar systems, communication equipment, and industrial heating systems.
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Equivalent
The equivalent products of the APT50M50JVFR chip are Microsemi's APT50M50JRVFR, Infineon's FF450R17ME4, Toshiba's MG150M2YS1, and NXP's BFR96S. These chips are also high power RF transistors designed for use in various applications including radar systems, communication systems, and industrial processes. -
Features
- 50A, 500V Schottky diode module - Low forward voltage drop for high efficiency - Compact and lightweight design - High surge capability and reliability - Encapsulated in a thermally conductive and electrically isolated package - Ideal for industrial and power electronics applications. -
Pinout
The APT50M50JVFR is a power transistor module with a pin count of 7 pins. It is designed for high-power applications, including motor control and power inverters. The pins are typically used for gate drive, emitter, collector, and base connections. -
Manufacturer
The manufacturer of APT50M50JVFR is Microsemi Corporation, which is a semiconductor company specializing in the design and manufacture of high-performance analog and mixed-signal integrated circuits. They provide solutions for a variety of industries including aerospace, defense, communications, and industrial markets. -
Application Field
APT50M50JVFR can be used in various applications such as power supplies, motor control, lighting control, and inverters. With its high voltage and current ratings, low on-resistance, and fast switching speed, it is suitable for applications that require efficient power management and control. -
Package
The APT50M50JVFR chip is a module package type with dimensions of 50mm x 50mm x 4.4mm. It is a surface mount form factor with a weight of 25 grams.
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