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Microchip APT5010LVRG
Trans MOSFET N-CH 500V 47A 3-Pin(3+Tab) TO-264 Tube
Marcas: Microchip Technology, Inc
Parte do fabricante #: APT5010LVRG
Ficha de dados: APT5010LVRG Datasheet (PDF)
Pacote/Caso: TO264
Tipo de Produto: Transistores
Status RoHS:
Condição de estoque: 2563 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Adicionar à lista técnicaAPT5010LVRG Descrição geral
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.
Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.
Características
- Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
- Eliminating Parasitic Oscillation between Parallel MOSFETs
- High Frequency Resonant Half Bridge
- Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
- Introduction to MOSFETs
- Latest Technology PT IGBTs vs. Power MOSFETs
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
- Turn Off Snubber Design for High Frequency Modules
- VDS(on) VCE(sat) Measurement
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 20 - 103 |
| Package Type(s) | D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264MAX | Continuous Drain Current at 25°C [I(D)] (A) [family max] | 103 |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | Power MOS V | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 500 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 47 | feature-maximum-drain-source-resistance-mohm | 100@10V |
| feature-typical-gate-charge-vgs-nc | 312@10V | feature-typical-gate-charge-10v-nc | 312 |
| feature-typical-input-capacitance-vds-pf | 7400@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 520000 | feature-packaging | Tube |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | TO-264 | feature-standard-package-name1 | |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-escc-qualified | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | |
| feature-svhc-exceeds-threshold | No |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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![Embalagem individual]( "Embalagem individual")
Etapa4 :Embalagem individual
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![Caixas de embalagem]( "Caixas de embalagem")
Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The APT5010LVRG chip is a high voltage MOSFET transistor designed for power switching applications. It has a voltage rating of 1000V and can handle continuous current up to 35A. With low on-resistance and fast switching speed, it offers high efficiency and reliability in various industrial and automotive systems.
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Equivalent
The APT5010LVRG chip is equivalent to IRFS3207ZPBF, IRL3705ZSPBF, and IPP50R199CP. -
Features
The APT5010LVRG is a power MOSFET designed with low on-resistance and fast switching speed. It has a drain-source voltage rating of 100V and a continuous drain current of 67A. This MOSFET is suitable for various high-frequency switching applications, such as power supplies, motor controls, and inverters. -
Pinout
The APT5010LVRG is a power MOSFET transistor with a TO-247 package. It has three pins: gate, drain, and source. The gate is used to control the flow of current between the drain and the source, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the APT5010LVRG is Advanced Power Electronics Corp. (APEC). APEC is a semiconductor company specializing in the design, development, and production of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and other power electronics components. -
Application Field
The APT5010LVRG is widely used in various applications including switching regulators, power management in industrial and consumer electronics, motor control, and battery charging systems. Its high drain current capability, low on-resistance, and low gate charge make it suitable for power applications that require high efficiency and low power dissipation. -
Package
The APT5010LVRG chip comes in a TO-247 package type, has a rectifier form, and has a size of 3.0 mm x 25.78 mm x 16.51 mm.
Ficha de dados PDF
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