2N5195G

Part points

• The 2N5195G is a high-voltage, high-current NPN bipolar junction transistor (BJT) in a TO-225 package. It is commonly used in power amplifier circuits, voltage regulator circuits, and switching applications. With a maximum collector current of 4A and a breakdown voltage of 100V, it is suitable for a wide range of industrial and consumer electronics applications.

• Equivalent

  The equivalent products of the 2N5195G chip are the 2N5195 and 2N5195G-01 transistors. These are both NPN silicon epitaxial transistors commonly used in audio amplifier circuits. They have similar electrical characteristics and performance specifications to the 2N5195G chip.

• Features

  2N5195G is a silicon PNP transistor with high current capabilities up to 5A, low saturation voltage, and high DC current gain. It is designed for general purpose switching and amplifier applications in electronic circuits.

• Pinout

  The 2N5195G is a silicon NPN power transistor with a TO-3 package. It typically has 2 pins, with the function of the collector being pin 1 and the emitter being pin 2. The base pin is in the center and usually carries a dot for identification. It is commonly used in power amplification and switching applications.

• Manufacturer

  The 2N5195G is manufactured by ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, sensors, logic, timing, connectivity, discrete, SoC and custom devices for a wide range of applications and end-markets.

• Application Field

  The 2N5195G is commonly used in high-frequency amplifier applications, such as RF and microwave circuits. It is also utilized in switching applications and as a general-purpose transistor in various electronic devices and systems.

• Package

  The 2N5195G chip is in a TO-39 package type, with a single form and a standard size of 10mm x 6mm x 3mm.