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TO-247-4

(102 partes no total)
Número da peça do fabricante Descrição Fabricante Em estoque Operação
FGH40T120SQDNL4 GBT Transistor 1200V 160A with N-Channel Onsemi 9.458 Add to BOM
NTH4L020N120SC1 TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 milliohms, 1200 volts, M1 Onsemi 3.076 Add to BOM
IMZ120R030M1HXKSA1 Product IMZ120R030M1HXKSA1 is a N Channel TO-247-4-1 MOSFET with a voltage rating of 1 Infineon 9.458 Add to BOM
IMZ120R030M1H MOSFET SIC DISCRETE Infineon 9.458 Add to BOM
G3R20MT12K Silicon Carbide MOSFET N Channel Enhancement Mode GeneSiC Semiconductor 9.458 Add to BOM
LSIC1MO120G0025 High-power switching transistor with low RDS(on) for high-frequency applications Littelfuse Inc. 7.480 Add to BOM
DMWS120H100SM4 MOSFET SiC with BVDSS greater than 1000V, TO247-4 package in a tube of 30 pieces Diodes Incorporated 7.214 Add to BOM
MSC035SMA070B4 Silicon carbide MOSFET rated at 700 volts and 35 milliohms in TO-247-4 package Microchip Technology 9.072 Add to BOM
MSC025SMA330B4 MOSFET SIC 3300 V 25 mOhm TO-247-4 Microchip 9.458 Add to BOM
MSC040SMA120B4 N-Channel 1200 V 66A (Tc) 323W (Tc) Through Hole TO-247-4 Microchip Technology 7.369 Add to BOM
MSC025SMA120B4 N-Channel 1200 V 103A (Tc) 500W (Tc) Through Hole TO-247-4 Microchip 9.458 Add to BOM
MSC080SMA330B4 3300V 41A N-Channel MOSFET Transistor TO-247 4-Pin Tube Microchip 9.458 Add to BOM
MSC400SMA330B4 MOSFET MOSFET SIC 3300 V 400 mOhm TO-247-4 Microchip Technology 9.212 Add to BOM
MSC017SMA120B4 Discrete Semiconductor Modules MOSFET SIC 1200 V 17 mOhm TO-247-4 Microchip Technology 5.718 Add to BOM
MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET, product code MSC015SMA070B4 Microchip Technology 6.226 Add to BOM
MSC035SMA170B4 N-Channel 1700 V 68A (Tc) 370W (Tc) Through Hole TO-247-4 Microchip Technology 8.784 Add to BOM
E3M0032120K Gen 3 Automotive 1200V 32mohm MOSFET SiC TO-247-4 Wolfspeed, Inc 6.651 Add to BOM
UJ4SC075006K4S High-voltage JFET with 6 milliohm on-resistance, Silicon Carbide technology Qorvo 7.116 Add to BOM
FGH75T65SQDNL4 IGBT with Field Stop IV/4 Lead Onsemi 9.458 Add to BOM
FGH75T65SHDTL4 FGH75T65SHDTL4 is an N-channel IGBT with a voltage rating of 650V and a current rating of 150A Onsemi 9.458 Add to BOM
IMZ120R045M1XKSA1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 5.6pF 50volts C0G +/-0.5pF Infineon Technologies 9.212 Add to BOM
NVH4L045N065SC1 N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L onsemi 9.458 Add to BOM
NVH4L015N065SC1 N-Channel 650 V 142A (Tc) 500W (Tc) Through Hole TO-247-4L onsemi 9.458 Add to BOM
G3R20MT17K Field-Effect Transistor for Power Applications G3R20MT17K GeneSiC Semiconductor 9.458 Add to BOM
E3M0060065K MOSFET with a voltage rating of 650 volts, employing Silicon Carbide technology Wolfspeed 9.458 Add to BOM
E3M0075120K ROHS compliant, 15V gate-source voltage Wolfspeed, Inc. 9.066 Add to BOM
UF3C120080K4S 1200V-80mΩ Silicon Carbide Field-Effect Transistor (SiC FET) Qorvo 9.458 Add to BOM
C3M0120065K TO-247 4-Pin Silicon Carbide N-Channel MOSFET 650V 22A Wolfspeed 9.458 Add to BOM
C3M0021120K N-channel Mosfet suitable for high-power electronics, with a voltage rating of 1 WOLFSPEED INC 7.023 Add to BOM
UF4SC120023K4S This MOSFET, UF4SC120023K4S, offers high performance with its null gate voltage and is suitable for a variety of applications Qorvo 8.353 Add to BOM
SCT3060ARC14 N-Channel MOSFET Rohm Semiconductor 9.011 Add to BOM
C3M0045065K Silicon Carbide N-Channel Transistor rated at 650V and 49A in TO-247 Package Wolfspeed, Inc. 6.499 Add to BOM
UF3C120150K4S Part number UF3C120150K4S Qorvo 9.458 Add to BOM
E3M0021120K Automotive MOSFET SiC Gen 3 TO-247-4 1200V 21mohm Wolfspeed, Inc. 5.136 Add to BOM
UJ4SC075011K4S Advanced SiC FET technology for reliable and efficient applications QORVO 8.875 Add to BOM
UJ4C075033K4S High-voltage JFET with Silicon Carbide technology and low on-state resistance Qorvo 9.755 Add to BOM
SCT3030ARC14 N-Channel MOSFET Transistor, 650V, 70A, TO-247 Package Rohm Semiconductor 9.247 Add to BOM
UF3SC120009K4S UF3SC120009K4S: Silicon Carbide FET rated at 1200 Volts with 8.6 milliohm On-Resistance Qorvo 8.836 Add to BOM
UF3SC120016K4S TO-247-4L package containing a 1200V SiC FET with 16mΩ Qorvo 9.309 Add to BOM
UF3C120040K4S Switching-performance SiC FETs Qorvo 7.880 Add to BOM
G3R30MT12K Silicon Carbide MOSFET with 1200V voltage rating and 30mΩ on-resistance, packaged in TO-247-4 format as G3R30MT12K GeneSiC Semiconductor 9.458 Add to BOM
G3R75MT12K Product G3R75MT12K is a MOSFET designed to operate at 1 GeneSiC Semiconductor 9.458 Add to BOM
C2M0045170P Silicon carbide N-channel transistor with 1.7KV voltage rating and 72A current capacity, packaged in bulk TO-247 format Wolfspeed 9.458 Add to BOM
G3R12MT12K High-Power Field-Effect Transistor GeneSiC Semiconductor 9.458 Add to BOM
UF3C065030K4S UF3C065030K4S: 650-volt Silicon Carbide FET featuring a 27-milliohm resistance Qorvo 5.867 Add to BOM
C3M0065100K Robust and reliable 1kV MOSFET for harsh environments WOLFSPEED INC 7.295 Add to BOM
C3M0120100K High-voltage MOSFET with 120mOhm RDS(ON) and G3 silicon carbide technology housed in TO-247-4 package Wolfspeed, Inc. 6.066 Add to BOM
IKZ75N65EL5 TO-247-4 IGBTs ROHS infineon 9.470 Add to BOM
IKZ75N65EH5 IGBT Silicon Transistor Chip, 650 Volts, 90 Amperes, TO-247 Package infineon 5.187 Add to BOM
STC03DE170HP Hybrid Emitter Switched Bipolar Transistor (STC03DE170HP) STMicroelectronics 9.961 Add to BOM