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TO-247-4

(102 partes no total)
Número da peça do fabricante Descrição Fabricante Em estoque Operação
STC04IE170HP TO-247 Tube Emitter Switched Bipolar Transistor (4-Pin, 4+Tab) STMicroelectronics 8.792 Add to BOM
STC04IE170HV ESBT Gate Driver for 1700V Switching Bipolar Transistors at 4A STMicroelectronics 9.458 Add to BOM
C3M0016120K G3 Silicon Carbide MOSFET 1200V with 16mOhm resistance Wolfspeed 9.458 Add to BOM
SCT3080KRC14 SCT3080KRC14 is a N Channel MOSFET capable of handling 1 Rohm Semiconductor 8.867 Add to BOM
UF3SC065007K4S Features: High voltage rating of 650V, current handling capacity of 120A, low on-resistance of 9mΩ at 50A Qorvo 5.321 Add to BOM
SCT4026DRHRC15 Robust and reliable power electronics component for demanding application Rohm Semiconductor 9.754 Add to BOM
UF3C065040K4S UF3C065040K4S stands out with its impressive specifications Qorvo 9.860 Add to BOM
IGZ100N65H5 High-power IGBT transistor for industrial applications Infineon Technologies 7.309 Add to BOM
IMZ120R045M1 Silicon Carbide MOSFET 1200V SiC Trench Infineon 8.130 Add to BOM
IPZ65R045C7 MOSFET N-Ch 700V 46A TO247-4 Infineon 6.654 Add to BOM
UJ4C075018K4S Power Field-Effect Transistor, Qorvo 9.458 Add to BOM
UJ4C075060K4S Power Field-Effect Transistor, Qorvo 9.458 Add to BOM
G2R50MT33K Silicon Carbide MOSFET N-Channel Enhancement Mode GeneSiC Semiconductor 6.489 Add to BOM
G3R45MT17K Silicon Carbide MOSFET N Channel Enhancement Mode GeneSiC Semiconductor 9.458 Add to BOM
G3R40MT12K Silicon Carbide MOSFET N Channel Enhancement Mode GeneSiC Semiconductor 5.213 Add to BOM
STC03DE170HV Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor STMicroelectronics 5.904 Add to BOM
FCH023N65S3L4 N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-4 onsemi 9.458 Add to BOM
NTH4L045N065SC1 N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L onsemi 9.458 Add to BOM
NTH4L040N120SC1 N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L onsemi 9.458 Add to BOM
NTH4L022N120M3S N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L onsemi 9.458 Add to BOM
UJ4SC075009K4S N-Channel 750 V 106A (Tc) 375W (Tc) Through Hole TO-247-4 Qorvo 6.620 Add to BOM
IPZ60R040C7 MOSFET HIGH POWER_NEW Infineon Technologies Corporation 2.176 Add to BOM
C3M0030090K Trans MOSFET N-CH SiC 900V 73A 4-Pin(4+Tab) TO-247 Wolfspeed 9.458 Add to BOM
IPZ65R065C7 MOSFET HIGH POWER_NEW Infineon Technologies Corporation 3.399 Add to BOM
IPZ65R019C7 MOSFET N-Ch 700V 75A TO247-4 Infineon Technologies Corporation 2.700 Add to BOM
C3M0040120K Trans MOSFET N-CH SiC 1.2KV 66A 4-Pin(4+Tab) TO-247 Wolfspeed 9.458 Add to BOM
STW57N65M5-4 N-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-4L STMicroelectronics 9.458 Add to BOM
C3M0075120K Silicon Carbide MOSFET rated at 1200 volts with a resistance of 75 milliohms Wolfspeed 7.035 Add to BOM
NTH4L080N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Onsemi 4.738 Add to BOM
UF3C065080K4S Trans MOSFET N-CH SiC 650V 31A 4-Pin(4+Tab) TO-247 Qorvo 7.145 Add to BOM
UF4SC120030K4S N-Channel 1200 V 53A (Tc) 341W (Tc) Through Hole TO-247-4 Qorvo 7.554 Add to BOM
UJ4C075023K4S N-Channel 750 V 66A (Tc) 306W (Tc) Through Hole TO-247-4 Qorvo 9.192 Add to BOM
GP2T080A120H N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4 SemiQ 6.473 Add to BOM
GP2T040A120H N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-4 SemiQ 8.243 Add to BOM
STGW100H65FB2-4 IGBT Trench Field Stop 650 V 145 A 441 W Through Hole TO-247-4 STMicroelectronics 6.585 Add to BOM
STGW75H65DFB2-4 IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4 STMicroelectronics 9.372 Add to BOM
STGW60H65DFB-4 IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-4 STMicroelectronics 9.674 Add to BOM
SICW080N120Y4-BP Trans MOSFET N-CH SiC 1.2KV 39A 4-Pin(4+Tab) TO-247 Tube Micro Commercial Components (MCC) 9.812 Add to BOM
FGH75T65SQDTL4 IGBT Trench Field Stop 650 V 150 A Through Hole TO-247-4 onsemi 5.505 Add to BOM
NTH4LN019N65S3H N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4 onsemi 7.246 Add to BOM
IPZ60R060C7 MOSFET HIGH POWER_NEW Infineon Technologies Corporation 2.213 Add to BOM
IKZA40N120CS7XKSA1 IGBT Transistors Infineon 9.458 Add to BOM
NGTB40N120FL2WAG Trans IGBT Chip N-CH 1200V 160A 536W 4-Pin(4+Tab) TO-247 Tube onsemi 8.945 Add to BOM
STW48N60M6-4 MOSFET N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET STMicroelectronics 6.513 Add to BOM
STW48N60M2-4 MOSFET N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET STMicroelectronics 8.295 Add to BOM
IPZ65R095C7 N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO247-4-1 Infineon Technologies Corporation 3.845 Add to BOM
MSC060SMA070B4 N-Channel 700 V 39A (Tc) 143W (Tc) Through Hole TO-247-4 Microchip 6.597 Add to BOM
IMZA65R083M1HXKSA1 Silicon Carbide Power Mosfet Infineon 9.458 Add to BOM
IKY75N120CS6XKSA1 Trans IGBT Chip N-CH 1200V 150A 880W 4-Pin(4+Tab) TO-247 Tube Infineon 9.458 Add to BOM
STW70N60M2-4 N-Channel 600 V 68A (Tc) 450W (Tc) Through Hole TO-247-4 STMicroelectronics 8.746 Add to BOM