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TO-247-4
(102 partes no total)Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
---|---|---|---|---|
STC04IE170HP | TO-247 Tube Emitter Switched Bipolar Transistor (4-Pin, 4+Tab) | STMicroelectronics | 8.792 | Add to BOM |
STC04IE170HV | ESBT Gate Driver for 1700V Switching Bipolar Transistors at 4A | STMicroelectronics | 9.458 | Add to BOM |
C3M0016120K | G3 Silicon Carbide MOSFET 1200V with 16mOhm resistance | Wolfspeed | 9.458 | Add to BOM |
SCT3080KRC14 | SCT3080KRC14 is a N Channel MOSFET capable of handling 1 | Rohm Semiconductor | 8.867 | Add to BOM |
UF3SC065007K4S | Features: High voltage rating of 650V, current handling capacity of 120A, low on-resistance of 9mΩ at 50A | Qorvo | 5.321 | Add to BOM |
SCT4026DRHRC15 | Robust and reliable power electronics component for demanding application | Rohm Semiconductor | 9.754 | Add to BOM |
UF3C065040K4S | UF3C065040K4S stands out with its impressive specifications | Qorvo | 9.860 | Add to BOM |
IGZ100N65H5 | High-power IGBT transistor for industrial applications | Infineon Technologies | 7.309 | Add to BOM |
IMZ120R045M1 | Silicon Carbide MOSFET 1200V SiC Trench | Infineon | 8.130 | Add to BOM |
IPZ65R045C7 | MOSFET N-Ch 700V 46A TO247-4 | Infineon | 6.654 | Add to BOM |
UJ4C075018K4S | Power Field-Effect Transistor, | Qorvo | 9.458 | Add to BOM |
UJ4C075060K4S | Power Field-Effect Transistor, | Qorvo | 9.458 | Add to BOM |
G2R50MT33K | Silicon Carbide MOSFET N-Channel Enhancement Mode | GeneSiC Semiconductor | 6.489 | Add to BOM |
G3R45MT17K | Silicon Carbide MOSFET N Channel Enhancement Mode | GeneSiC Semiconductor | 9.458 | Add to BOM |
G3R40MT12K | Silicon Carbide MOSFET N Channel Enhancement Mode | GeneSiC Semiconductor | 5.213 | Add to BOM |
STC03DE170HV | Bipolar Transistors - BJT Hybrid emiter switch bipolar transistor | STMicroelectronics | 5.904 | Add to BOM |
FCH023N65S3L4 | N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-4 | onsemi | 9.458 | Add to BOM |
NTH4L045N065SC1 | N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L | onsemi | 9.458 | Add to BOM |
NTH4L040N120SC1 | N-Channel 1200 V 58A (Tc) 319W (Tc) Through Hole TO-247-4L | onsemi | 9.458 | Add to BOM |
NTH4L022N120M3S | N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-4L | onsemi | 9.458 | Add to BOM |
UJ4SC075009K4S | N-Channel 750 V 106A (Tc) 375W (Tc) Through Hole TO-247-4 | Qorvo | 6.620 | Add to BOM |
IPZ60R040C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.176 | Add to BOM |
C3M0030090K | Trans MOSFET N-CH SiC 900V 73A 4-Pin(4+Tab) TO-247 | Wolfspeed | 9.458 | Add to BOM |
IPZ65R065C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 3.399 | Add to BOM |
IPZ65R019C7 | MOSFET N-Ch 700V 75A TO247-4 | Infineon Technologies Corporation | 2.700 | Add to BOM |
C3M0040120K | Trans MOSFET N-CH SiC 1.2KV 66A 4-Pin(4+Tab) TO-247 | Wolfspeed | 9.458 | Add to BOM |
STW57N65M5-4 | N-Channel 650 V 42A (Tc) 250W (Tc) Through Hole TO-247-4L | STMicroelectronics | 9.458 | Add to BOM |
C3M0075120K | Silicon Carbide MOSFET rated at 1200 volts with a resistance of 75 milliohms | Wolfspeed | 7.035 | Add to BOM |
NTH4L080N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L | Onsemi | 4.738 | Add to BOM |
UF3C065080K4S | Trans MOSFET N-CH SiC 650V 31A 4-Pin(4+Tab) TO-247 | Qorvo | 7.145 | Add to BOM |
UF4SC120030K4S | N-Channel 1200 V 53A (Tc) 341W (Tc) Through Hole TO-247-4 | Qorvo | 7.554 | Add to BOM |
UJ4C075023K4S | N-Channel 750 V 66A (Tc) 306W (Tc) Through Hole TO-247-4 | Qorvo | 9.192 | Add to BOM |
GP2T080A120H | N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4 | SemiQ | 6.473 | Add to BOM |
GP2T040A120H | N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-4 | SemiQ | 8.243 | Add to BOM |
STGW100H65FB2-4 | IGBT Trench Field Stop 650 V 145 A 441 W Through Hole TO-247-4 | STMicroelectronics | 6.585 | Add to BOM |
STGW75H65DFB2-4 | IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247-4 | STMicroelectronics | 9.372 | Add to BOM |
STGW60H65DFB-4 | IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-4 | STMicroelectronics | 9.674 | Add to BOM |
SICW080N120Y4-BP | Trans MOSFET N-CH SiC 1.2KV 39A 4-Pin(4+Tab) TO-247 Tube | Micro Commercial Components (MCC) | 9.812 | Add to BOM |
FGH75T65SQDTL4 | IGBT Trench Field Stop 650 V 150 A Through Hole TO-247-4 | onsemi | 5.505 | Add to BOM |
NTH4LN019N65S3H | N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4 | onsemi | 7.246 | Add to BOM |
IPZ60R060C7 | MOSFET HIGH POWER_NEW | Infineon Technologies Corporation | 2.213 | Add to BOM |
IKZA40N120CS7XKSA1 | IGBT Transistors | Infineon | 9.458 | Add to BOM |
NGTB40N120FL2WAG | Trans IGBT Chip N-CH 1200V 160A 536W 4-Pin(4+Tab) TO-247 Tube | onsemi | 8.945 | Add to BOM |
STW48N60M6-4 | MOSFET N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET | STMicroelectronics | 6.513 | Add to BOM |
STW48N60M2-4 | MOSFET N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET | STMicroelectronics | 8.295 | Add to BOM |
IPZ65R095C7 | N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO247-4-1 | Infineon Technologies Corporation | 3.845 | Add to BOM |
MSC060SMA070B4 | N-Channel 700 V 39A (Tc) 143W (Tc) Through Hole TO-247-4 | Microchip | 6.597 | Add to BOM |
IMZA65R083M1HXKSA1 | Silicon Carbide Power Mosfet | Infineon | 9.458 | Add to BOM |
IKY75N120CS6XKSA1 | Trans IGBT Chip N-CH 1200V 150A 880W 4-Pin(4+Tab) TO-247 Tube | Infineon | 9.458 | Add to BOM |
STW70N60M2-4 | N-Channel 600 V 68A (Tc) 450W (Tc) Through Hole TO-247-4 | STMicroelectronics | 8.746 | Add to BOM |
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