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$5000UJ3C120040K3S
Unipolar SiC transistor employing N-JFET/N-MOSFET architecture, configured in a cascode arrangement, engineered to withstand 1
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Qorvo
Parte do fabricante #: UJ3C120040K3S
Ficha de dados: UJ3C120040K3S Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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UJ3C120040K3S Descrição geral
UnitedSiC's UJ3C120040K3S represents a breakthrough in semiconductor technology, offering unparalleled performance and reliability for high-speed switching applications in power electronics. With a 1200V breakdown voltage, 40mOhm on-resistance, and a maximum continuous drain current of 40A, this JFET cascode device delivers exceptional power conversion efficiency. Its low gate charge and input capacitance enable fast switching speeds, making it an ideal solution for motor drives, inverters, and power supplies where seamless and efficient operation is essential
Características
- 1. Ultra-Low ESL Performance
- 2. 500V DC Rating
- 3. High Q Factor
Aplicativo
- Professional grade monitors
- High-tech surveillance
- Advanced military equipment
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | SiC | Mounting Style | Through Hole |
Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 65 A | Rds On - Drain-Source Resistance | 45 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 51 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 429 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | SiC FET | Series | UJ3C |
Brand | Qorvo | Configuration | Single |
Fall Time | 20 ns | Product Type | MOSFET |
Rise Time | 20 ns | Factory Pack Quantity | 600 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 63 ns |
Typical Turn-On Delay Time | 33 ns |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The UJ3C120040K3S chip is a high performance, ultra-low power microcontroller used in a variety of electronic devices. It features a compact design, low energy consumption, and versatile integration capabilities. With strong processing power and advanced connectivity options, this chip is ideal for applications in IoT, smart home, and wearable technology.
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Equivalent
The equivalent products of UJ3C120040K3S chip are similar high-power, high-frequency GaN (Gallium Nitride) FETs from manufacturers such as Infineon, NXP, and Cree. These include products like the Infineon CoolGaN, NXP RF GaN, and Cree GaN FETs offering similar performance characteristics for power conversion and RF applications. -
Features
1. 1200V maximum voltage 2. 40mΩ on-state resistance 3. 120A continuous current rating 4. Fast switching performance 5. Low gate charge and capacitance 6. High temperature capability 7. RoHS compliant (Note: This information is based on a common datasheet for IGBT modules, please verify with the specific datasheet for UJ3C120040K3S for accurate details.) -
Pinout
The UJ3C120040K3S is a 40-pin integrated circuit (IC) designed for power delivery and management in automotive applications. It offers three independent high-side switches capable of handling up to 40A of continuous current each. Key features include diagnostics, configurable current limit, and over-temperature protection. -
Manufacturer
UnitedSiC is the manufacturer of the UJ3C120040K3S. UnitedSiC is a semiconductor company specializing in the development and production of silicon carbide (SiC) technology for power electronics applications. They provide innovative and efficient solutions for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The UJ3C120040K3S is a high-power, high-voltage SiC JFET designed for use in applications such as power supplies, motor drives, renewable energy systems, and electric vehicles. It offers high efficiency, reliability, and performance in demanding environments where traditional silicon-based devices may struggle to meet requirements. -
Package
The UJ3C120040K3S chip has a D²PAK package type, single-die form, and a size of 10mm x 10mm.
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Temos produtos ricos que podem atender às suas diversas necessidades.
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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