ST STW26NM50

Part points

• The STW26NM50 is a power MOSFET chip designed for applications in power electronics and motor control. It offers low on-resistance, high switching speed, and low gate charge. The chip is capable of operating at high temperatures and withstands high drain-source voltages. It is commonly used in various industrial and automotive applications that require efficient power management and control.

• Equivalent

  The equivalent products of the STW26NM50 chip are the CSD19536KCS and IRF9530NSPBF.

• Features

  The STW26NM50 is a power MOSFET that offers a low on-resistance and high voltage capability, making it suitable for efficient power management applications. It has a maximum drain-source voltage of 500V, a low gate threshold voltage, and a fast switching time. Overall, it provides reliable and efficient power switching capabilities.

• Pinout

  The STW26NM50 is a Power MOSFET transistor with a TO-247 package. It has three pins: Gate (G), Drain (D), and Source (S). The Gate pin controls the conduction of current between the Drain and Source pins. It is used in a variety of applications including motor control, electronic ballasts, and power conversion systems.

• Manufacturer

  The manufacturer of the STW26NM50 is STMicroelectronics. It is a multinational semiconductor company that designs, develops, manufactures, and markets a wide range of products including microcontrollers, power management chips, sensors, and Automotive Integrated Circuits (ICs).

• Application Field

  The STW26NM50, a power MOSFET, is commonly used in various applications including power supplies, motor control, lighting systems, and inverters. It provides low on-resistance and high switching speed, making it suitable for efficient power conversion and control in these fields.

• Package

  The STW26NM50 chip is a power MOSFET semiconductor device. It comes in a TO-247 package type, which is a high-power transistor package. The dimensions of the TO-247 package are typically 20.3mm x 15.5mm x 5.7mm.