Pedidos acima de
$5000
RHU002N06T106
High Efficiency N-Channel MosFet with 60 V Voltage Rating, 200 mW Power Handling, and 2.4 Ohm Resistance in UMT-3 Package
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Rohm Semiconductor
Parte do fabricante #: RHU002N06T106
Ficha de dados: RHU002N06T106 Ficha de dados (PDF)
Pacote/Caso: SOT-323-3
Status RoHS:
Condição de estoque: 7.427 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
10 | $0,054 | $0,540 |
100 | $0,050 | $5,000 |
300 | $0,047 | $14,100 |
3000 | $0,045 | $135,000 |
6000 | $0,044 | $264,000 |
9000 | $0,043 | $387,000 |
Em estoque: 7.427 PCS
RHU002N06T106 Descrição geral
The RHU002N06T106 MOSFET transistor, with its N Channel polarity, is capable of handling a Continuous Drain Current Id of 200mA and features a Drain Source Voltage Vds of 60V. It is designed with an On Resistance Rds(on) of 2.4ohm and operates with a Rds(on) Test Voltage Vgs of 10V and a Threshold Voltage Vgs Typ of 2.5V. Housed in a UMT case style with 3 pins, this small signal transistor has a Power Dissipation of 200mW and is suitable for a wide Operating Temperature Range of -55°C to +150°C. With an emphasis on easy integration, it features an SMD termination type that makes it flexible for use in various electronic designs. The MOSFET also boasts a Voltage Vds Typ of 60V and a Voltage Vgs Max of 20V, ensuring reliable and consistent performance
Características
- High-side and low-side switching options
- Limited inrush current minimizes startup surges
- Pulse-by-pulse control ensures efficient operation
Aplicativo
- Low voltage converters
- Reliable switching systems
- Eco-friendly LED lights
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-323-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 200 mA |
Rds On - Drain-Source Resistance | 2.8 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 2.2 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 200 mW | Channel Mode | Enhancement |
Series | RHU002N06 | Brand | ROHM Semiconductor |
Configuration | Single | Fall Time | 8 ns |
Height | 0.8 mm | Length | 2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 8 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 4 ns |
Typical Turn-On Delay Time | 15 ns | Width | 1.25 mm |
Part # Aliases | RHU002N06 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
![]() |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
![]() |
PayPal | cobrar taxa de serviço de 4,0%. |
![]() |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
![]() |
Western Union | charge US.00 banking fee. |
![]() |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
-
Etapa1 :produtos
-
Etapa2 :Embalagem a vácuo
-
Etapa3 :Saco antiestático
-
Etapa4 :Embalagem individual
-
Etapa5 :Caixas de embalagem
-
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
-
The RHU002N06T106 is a power MOSFET transistor chip that is designed for high frequency and high current applications. It features a low on-state resistance and is capable of handling up to 2A of continuous current. This chip is commonly used in power management circuits and other industrial applications.
-
Equivalent
The equivalent products of RHU002N06T106 chip are ON Semiconductor NTHL002N06N, Infineon BSC0922NDI, and Nexperia PSMN1R6-40YLC. These chips are also Power MOSFETs with similar specifications and performance characteristics. -
Features
1. N-channel MOSFET with low ON resistance 2. Features a drain-source voltage of 60V 3. Drain current rating of 4A 4. Low threshold voltage for improved efficiency 5. Suitable for power management and voltage regulation applications -
Pinout
RHU002N06T106 is a N-channel MOSFET with a pin count of 3. The functions of the pins are: pin 1 - gate, pin 2 - drain, and pin 3 - source. It is commonly used for power management applications due to its low on-resistance and high efficiency. -
Manufacturer
The manufacturer of RHU002N06T106 is Rohm Semiconductor. Rohm Semiconductor is a Japanese electronic parts manufacturer that specializes in developing and manufacturing semiconductor products such as transistors, diodes, and integrated circuits for a wide range of industries including automotive, telecommunications, and consumer electronics. -
Application Field
RHU002N06T106 is commonly used in power management applications such as voltage regulators, switching converters, and motor control circuits. It can also be used in various power supply and battery charging applications due to its low on-resistance and high current handling capability. -
Package
The RHU002N06T106 chip is a dual N-channel 60V MOSFET transistor housed in a SOT-223 package. The dimensions of the package are 10.15mm x 6.50mm x 2.30mm.
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
-
Temos produtos ricos que podem atender às suas diversas necessidades.
-
A quantidade mínima de pedido começa em 1 unidade.
-
A menor taxa de envio internacional começa em US$ 0,00
-
365 dias de garantia de qualidade para todos os produtos