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ON NTMFS4C029NT1G

Name: NTMFS4C029NT1G
Rating: 4.5 (6 reviews)

N-Channel 30 V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Marcas: ON Semiconductor, LLC

Parte do fabricante #: NTMFS4C029NT1G

Ficha de dados: NTMFS4C029NT1G Datasheet (PDF)

Pacote/Caso: TDFN-8

Status RoHS:

Condição de estoque: 2.262 peças, novo original

Tipo de Produto: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Preços

*Todos os preços estão em USD

Quantidade	Preço unitário	Preço Externo
5	$0,326	$1,630
50	$0,268	$13,400
150	$0,243	$36,450
1500	$0,211	$316,500
3000	$0,197	$591,000
4500	$0,189	$850,500

Em estoque: 2.262 PCS

- +

Rápida citação

Por favor, envie uma RFQ para NTMFS4C029NT1G ou e-mail para nós: E-mail: [email protected], entraremos em contato com você dentro de 12 horas.

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Observação

NTMFS4C029NT1G Descrição geral

N-Channel 30 V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Características

Ultra-Low On-State Resistance
Compact and Highly Efficient Design
Excellent Thermal Performance Guarantee
Fast Switching Speed for High-Power Applications
Lithium-Ion Compatible and AEC-Q100 Qualified
Robust ESD Protection for Longer Lifespan

Aplicativo

Smart Power Distribution
Flexible Power Options
Integrated Power Management

Especificações

Parâmetro	Valor	Parâmetro	Valor
Source Content uid	NTMFS4C029NT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	ONSEMI
Manufacturer Package Code	488AA	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	67 Weeks
Date Of Intro	2016-08-08	Samacsys Manufacturer	onsemi
Avalanche Energy Rating (Eas)	31 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	8.2 A	Drain-source On Resistance-Max	0.0058 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	23.6 W	Pulsed Drain Current-Max (IDM)	132 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	feature-category	Power MOSFET
feature-material		feature-process-technology
feature-configuration	Single Quad Drain Triple Source	feature-channel-mode	Enhancement
feature-channel-type	N	feature-number-of-elements-per-chip	1
feature-maximum-drain-source-voltage-v	30	feature-maximum-gate-source-voltage-v	±20
feature-maximum-gate-threshold-voltage-v	2.2	feature-maximum-continuous-drain-current-a	15
feature-maximum-drain-source-resistance-mohm	5.88@10V	feature-typical-gate-charge-vgs-nc	[email protected]\|18.6@10V
feature-typical-gate-charge-10v-nc	18.6	feature-typical-input-capacitance-vds-pf	987@15V
feature-typical-output-capacitance-pf		feature-maximum-power-dissipation-mw	5600
feature-packaging	Tape and Reel	feature-rad-hard
feature-pin-count	5	feature-supplier-package	SO-FL EP
feature-standard-package-name1	DFN	feature-cecc-qualified
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-aec-qualified-number
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc	Yes
feature-svhc-exceeds-threshold	Yes

Envio

	Taxa de envio	Tempo de espera
DHL	$20.00-$40.00 (0.50 KG)	2-5 dias
FedEx	$20.00-$40.00 (0.50 KG)	2-5 dias
UPS	$20.00-$40.00 (0.50 KG)	2-5 dias
TNT	$20.00-$40.00 (0.50 KG)	2-5 dias
EMS	$20.00-$40.00 (0.50 KG)	2-5 dias
CORREIO AÉREO REGISTADO	$20.00-$40.00 (0.50 KG)	2-5 dias

Tempo de processamento: A taxa de envio depende de diferentes zonas e países.

Pagamento

Termos de pagamento		Taxa de mão
	Transferência bancária	cobrar taxa bancária de US$ 30,00.
	PayPal	cobrar taxa de serviço de 4,0%.
	Cartão de crédito	cobrar taxa de serviço de 3,5%.
	Western Union	charge US.00 banking fee.
	Grama de dinheiro	cobrar taxa bancária de US$ 0,00.

Garantias

1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.

2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.

Embalagem

Etapa1 :produtos
Etapa2 :Embalagem a vácuo
Etapa3 :Saco antiestático
Etapa4 :Embalagem individual
Etapa5 :Caixas de embalagem
Etapa6 :etiqueta de envio com código de barras

Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.

Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.

Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.

Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.

Part points

NTMFS4C029NT1G is a Power M Field-Effect Transistor (FET) chip from ON Semiconductor that is often used in power management applications. It offers low on-resistance and high current-handling capability, making it ideal for use in high-efficiency power supplies, DC-DC converters, and motor control circuits.
Equivalent

The equivalent products of NTMFS4C029NT1G chip are: 1. IRF7807D1PBF 2. FDS8958A 3. FDS6912A 4. BSC0906N15NS3G 5. NTMFS4C2810N 6. FDB83N15TM These chips are all power MOSFETs with similar specifications and features as the NTMFS4C029NT1G.
Features

NTMFS4C029NT1G is a Power MOSFET with a low ON-resistance, high switching performance, and low gate charge. It also features a small footprint and a high current capability, making it suitable for power management applications in space-constrained designs.
Pinout

The NTMFS4C029NT1G is a MOSFET with a pin count of 8. It is a N-channel Power MOSFET used for high-speed switching applications in power supplies and DC-DC converters. The functions of the pins are Gate (G), Drain (D), Source (S), and various other connections for optimal performance.
Manufacturer

The manufacturer of the NTMFS4C029NT1G is ON Semiconductor, a multinational semiconductor supplier. ON Semiconductor specializes in designing and manufacturing power management and digital signal processing products for a variety of industries including automotive, industrial, and consumer electronics.
Application Field

The NTMFS4C029NT1G is typically used in power management applications such as voltage regulation, load switches, motor control, and battery charging. It offers low on-state resistance, high current handling capability, and fast switching speeds, making it suitable for a wide range of power electronics designs.
Package

The NTMFS4C029NT1G chip is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and comes in a surface mount package. It has a form factor of 5mm x 6mm and a size of 8-pin Dual Asymmetric Leadless Package (DALP).