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$5000ON NTHD3101FT1G
P-Channel ChipFET™ Power MOSFET and Schottky Diode -20V -4.4A 80mΩ
Marcas: ON Semiconductor, LLC
Parte do fabricante #: NTHD3101FT1G
Ficha de dados: NTHD3101FT1G Datasheet (PDF)
Pacote/Caso: ChipFET-8
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 2.546 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NTHD3101FT1G Descrição geral
Meet the NTHD3101FT1G, a high-performance P-channel MOSFET designed for precision power management in demanding applications. With a continuous drain current rating of -3.2A and a maximum drain-source voltage of -20V, this MOSFET offers exceptional efficiency and reliability for your circuit designs. Its low on-resistance of 0.064ohm and threshold voltage of -1.5V ensure accurate control of current flow, while the chipFET-8 package style with 8 pins simplifies integration into your PCB layout. Operating at temperatures up to 150°C, the NTHD3101FT1G can withstand harsh environmental conditions with ease. Choose this automotive-qualified MOSFET for dependable performance and long-term durability in your electronic systems
Características
- This device features high speed and low noise.
- It offers fast switching times and high efficiency.
- NTHD3 101FT 1G is suitable for high power applications.
- The MOSFET has a high current rating and low RDS(on).
Aplicativo
- Energy-efficient solutions
- High-speed switching technology
- Integrated circuit design
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Status | Last Shipments | CAD Models | |
| Compliance | PbAHP | Package Type | ChipFET-8 |
| Case Outline | 1206A-03 | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 3000 | ON Target | N |
| Channel Polarity | P-Channel | Configuration | with Schottky Diode |
| V(BR)DSS Min (V) | -20 | VGS Max (V) | 8 |
| VGS(th) Max (V) | 1.5 | ID Max (A) | 3.2 |
| PD Max (W) | 1.1 | RDS(on) Max @ VGS = 2.5 V (mΩ) | 85 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 64 | RDS(on) Max @ VGS = 10 V (mΩ) | - |
| Qg Typ @ VGS = 4.5 V (nC) | 8.6 | Qg Typ @ VGS = 10 V (nC) | 7.4 |
| Ciss Typ (pF) | 680 | Pricing ($/Unit) | Price N/A |
| Case/Package | SMD/SMT | Contact Plating | Tin |
| Number of Pins | 8 | Weight | 4.535924 g |
| Continuous Drain Current (ID) | 3.2 A | Current Rating | -3.2 A |
| Drain to Source Breakdown Voltage | -20 V | Drain to Source Resistance | 64 mΩ |
| Drain to Source Voltage (Vdss) | 20 V | Fall Time | 12.4 ns |
| Gate to Source Voltage (Vgs) | 8 V | Input Capacitance | 680 pF |
| Max Operating Temperature | 150 °C | Max Power Dissipation | 1.1 W |
| Min Operating Temperature | -55 °C | Nominal Vgs | -450 mV |
| Number of Elements | 1 | Packaging | Tape and Reel |
| Power Dissipation | 1.1 W | Rds On Max | 80 mΩ |
| Resistance | 64 MΩ | Rise Time | 11.7 ns |
| Schedule B | 8541290080 | Threshold Voltage | -1.5 V |
| Turn-Off Delay Time | 16 ns | Turn-On Delay Time | 5.8 ns |
| Voltage Rating (DC) | -20 V | Height | 1.05 mm |
| Length | 3.05 mm |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
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Part points
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The NTHD3101FT1G is a dual N-channel, high-speed power MOSFET chip designed for high-speed switching applications in power management and control circuits. It features a low gate charge and fast switching speed, making it ideal for use in power supplies, motor controls, and lighting applications.
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Equivalent
Some equivalent products of NTHD3101FT1G chip include AON6504, BUK7Y20-40E, and SUP53P06-20. These chips are also MOSFET transistors with similar specifications including voltage and current ratings. It is recommended to consult the datasheets of these chips for more detailed information and to ensure compatibility with your specific application. -
Features
NTHD3101FT1G is a high-speed, low input current diode with low capacitance and a low forward voltage drop. It is suitable for high-speed switching applications and has a unique, ultra-low profile packaging design for space-constrained applications. -
Pinout
The NTHD3101FT1G is a dual N-channel power MOSFET with a pin count of 6. Pin functions include Gate (1 and 4), Drain (3 and 6), and Source (2 and 5). This device is commonly used in high current switching applications. -
Manufacturer
The NTHD3101FT1G is manufactured by ON Semiconductor, which is a leading supplier of power management and analog semiconductor solutions. ON Semiconductor is a multinational company that provides a wide range of products for automotive, industrial, and consumer applications. They specialize in designing and manufacturing high-performance components for various industries worldwide. -
Application Field
The NTHD3101FT1G is commonly used in applications involving high-speed switching such as data communication, optical networking, and radar systems. Its low on-state resistance, low gate charge, and high breakdown voltage make it ideal for power management and protection circuits in these systems. -
Package
The NTHD3101FT1G chip is housed in a surface-mount DPAK package with a TO-252 form, measuring approximately 6.6mm x 6.2mm.
Ficha de dados PDF
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