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$5000ST NAND512R3A2DZA6E
High-performance storage solution for demanding application
Marcas: STMicroelectronics, Inc
Parte do fabricante #: NAND512R3A2DZA6E
Ficha de dados: NAND512R3A2DZA6E Datasheet (PDF)
Pacote/Caso: BGA-63
Tipo de Produto: Memória
Status RoHS:
Condição de estoque: 3.065 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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NAND512R3A2DZA6E Descrição geral
The NAND512R3A2DZA6E from Micron Technology is a powerful NAND Flash memory device with a capacity of 512 megabytes. It operates on a 3.3 volt power supply and is designed with memory blocks and pages for efficient data storage. With a synchronous interface and a maximum clock frequency of 50 MHz, this device offers lightning-fast data transfer speeds. Its support for features such as random read/write operations, hardware data protection, and error correction codes ensures the integrity of stored data. This makes it an ideal choice for solid-state drives, smartphones, tablets, and other consumer electronics devices where high-density storage and low power consumption are critical. The NAND512R3A2DZA6E is built for reliable performance and durability, making it suitable for use in high-demand environments
Características
- It has a storage capacity of 512 megabytes (MB).
- It uses a NAND flash memory architecture, which allows for fast read and write speeds.
- It uses a 3.3 volt power supply.
- It has a small form factor and is surface-mountable.
- It has a maximum operating temperature range of -40°C to 85°C.
Aplicativo
- S34ML04G200TFI000 from Cypress Semiconductor
- MT29F512G08CKCABH6-IT from Micron Technology
- K9GBG08U0M-PCB0 from Samsung Electronics
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | Part Package Code | BGA |
| Package Description | 9 X 11 MM, 1.05 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63 | Pin Count | 63 |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | Samacsys Manufacturer | Micron |
| Access Time-Max | 15000 ns | Command User Interface | YES |
| Data Polling | NO | JESD-30 Code | R-PBGA-B63 |
| JESD-609 Code | e1 | Length | 11 mm |
| Memory Density | 536870912 bit | Memory IC Type | FLASH |
| Memory Width | 8 | Number of Functions | 1 |
| Number of Sectors/Size | 4K | Number of Terminals | 63 |
| Number of Words | 67108864 words | Number of Words Code | 64000000 |
| Operating Mode | ASYNCHRONOUS | Operating Temperature-Max | 85 °C |
| Operating Temperature-Min | -40 °C | Organization | 64MX8 |
| Package Body Material | PLASTIC/EPOXY | Package Code | TFBGA |
| Package Equivalence Code | BGA63,10X12,32 | Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | Page Size | 512 words |
| Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | 260 |
| Programming Voltage | 1.8 V | Qualification Status | Not Qualified |
| Ready/Busy | YES | Seated Height-Max | 1.05 mm |
| Sector Size | 16K | Standby Current-Max | 0.00005 A |
| Supply Current-Max | 0.02 mA | Supply Voltage-Max (Vsup) | 1.95 V |
| Supply Voltage-Min (Vsup) | 1.7 V | Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | YES | Technology | CMOS |
| Temperature Grade | INDUSTRIAL | Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | BALL | Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | 30 |
| Toggle Bit | NO | Type | SLC NAND TYPE |
| Width | 9 mm |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The NAND512R3A2DZA6E chip is a 512Mb NAND flash memory device that is commonly used in products such as smartphones, tablets, and other electronic devices. It offers high storage capacity with fast read and write speeds, making it ideal for applications that require large amounts of data storage.
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Equivalent
The equivalent products of NAND512R3A2DZA6E chip are MT29F512G08CMCABH5-6IT, K9F5608U0D-J, IS42S16320F-7TLI, and W25N05JVA6. -
Features
NAND512R3A2DZA6E is a NAND flash memory chip with 512Gb capacity, 3.3V voltage, x8 I/O interface, and A6E package. It features high density storage, fast read/write speeds, and high reliability for a variety of storage applications. -
Pinout
The NAND512R3A2DZA6E is a 48-pin NAND flash memory device with a capacity of 512Mb. It is typically used for data storage in electronic devices. The pin functions include data input/output, address input, control signals, and power supply connections. -
Manufacturer
The manufacturer of the NAND512R3A2DZA6E is Micron Technology, Inc. Micron is a multinational corporation specializing in computer memory and data storage technology. They produce a wide range of products including dynamic random-access memory (DRAM), flash memory, and solid-state drives (SSDs) for various applications in the computer and electronics industry. -
Application Field
The NAND512R3A2DZA6E is commonly used in applications such as solid state drives (SSDs), digital cameras, portable media players, and gaming consoles for data storage and memory expansion. Its high capacity of 512 gigabytes and fast data transfer speeds make it suitable for a wide range of consumer electronics devices. -
Package
The NAND512R3A2DZA6E chip is available in a BGA package type with a form factor of 14x18 mm. It has a capacity of 512 Mb (64 MB) with an organization of 4 banks x 16 M x 8 pages x 2048 bytes.
Ficha de dados PDF
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