MUN5333DW1T1G

Part points

• MUN5333DW1T1G is a power transistor module designed for high-speed switching applications. It features low switching losses, high switching speed, and high input impedance. This device is typically used in power supplies, motor control, and inverters.

• Equivalent

  Some equivalent products of MUN5333DW1T1G chip are STMICROELECTRONICS - MUN5331DW1T1G and Infineon IDT MUN5333DW1T1G. These chips have similar specifications and functions, making them suitable replacements for each other in various electronic applications.

• Features

  MUN5333DW1T1G is a N-channel, 30V, 6.5mΩ logic level MOSFET with a compact, low-profile, and high-performance design. It features fast switching speeds, low gate charge, and a low on-resistance suitable for a wide range of applications, including power management and motor control systems.

• Pinout

  The MUN5333DW1T1G is a 6-pin dual N-channel MOSFET used for switch mode power supplies and motor control applications. Pin 1 is the gate of FET1, Pin 2 is the source of FET1 and source of FET2, Pin 3 is the drain of FET2, Pin 4 is the drain of FET1, Pin 5 is the gate of FET2, and Pin 6 is the substrate.

• Manufacturer

  The manufacturer of the MUN5333DW1T1G is ON Semiconductor. ON Semiconductor is a multinational semiconductor supplier company that offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, medical, and aerospace/defense applications.

• Application Field

  The MUN5333DW1T1G is typically used in applications where high efficiency and small form factor are required, such as power management in portable devices, LED lighting, and battery charging circuits. Its low on-resistance and low gate charge make it suitable for applications where high power density and energy efficiency are key factors.

• Package

  The MUN5333DW1T1G chip comes in a DFN-8 package, with dimensions of 2mm x 2mm x 0.95mm.