K4B2G1646Q-BCK0

Part points

• The K4B2G1646Q-BCK0 chip is a low power, high-speed CMOS dynamic random-access memory (DRAM) chip manufactured by Samsung. It has a capacity of 2 gigabytes (GB) and operates at a frequency of 800 MHz. This chip is commonly used in various electronic devices such as smartphones, tablets, laptops, and other computing devices.

• Equivalent

  The equivalent products of the K4B2G1646Q-BCK0 chip are: - Micron MT47H64M16HR-25E:H - Hynix H5TC4G63AFR-PBA - Samsung K4B2G1646G-BCK0 - SK hynix H5TC4G63CFR-PBA - Micron MT47H64M16HR-25E:J

• Features

  Key features of K4B2G1646Q-BCK0 include: - 2Gb DDR3 mobile SDRAM - Operates at an ultra-fast frequency of 1066 MHz - Compatible with a wide range of mobile devices - Low power consumption to extend battery life - Can be used in various applications such as smartphones, tablets, and laptops.

• Pinout

  The K4B2G1646Q-BCK0 is a DDR3L SDRAM with a pin count of 96 pins. It is a 2Gb memory chip with a 16-bit I/O interface. This chip is commonly used in various electronic devices such as smartphones, tablets, and laptops for system memory storage and data processing.

• Manufacturer

  Samsung is the manufacturer of the K4B2G1646Q-BCK0. It is a South Korean multinational conglomerate company that creates a wide range of products, including electronics, semiconductors, and telecommunications equipment. Samsung is one of the leading suppliers of memory chips in the world.

• Application Field

  The K4B2G1646Q-BCK0 is a high-density, high-performance DDR4 SDRAM module commonly used in a variety of applications such as servers, workstations, gaming PCs, networking equipment, and industrial systems. Its fast data transfer speeds and large capacity make it ideal for high-bandwidth applications that require reliable and efficient memory solutions.

• Package

  The K4B2G1646Q-BCK0 chip comes in a 78-ball 9x11.5mm FBGA package with a DDR3 SDRAM memory form. The size of the chip is 2Gb organized as 256Mbit x 8 I/Os.