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$5000IXFH120N20P
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Marcas: IXYS
Parte do fabricante #: IXFH120N20P
Ficha de dados: IXFH120N20P Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXFH120N20P Descrição geral
Polar™ HiPerFETs (IXF) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability.
Características
- International Standard Packages
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low Q
- G
- and R
- DS(on)
- Low Drain-to-Tab Capacitance
- Low Package Inductance
- Advantages:
- Easy to Mount
- Space Savings
Aplicativo
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC Motor Drives
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V | Id - Continuous Drain Current: | 120 A |
Rds On - Drain-Source Resistance: | 22 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V | Qg - Gate Charge: | 152 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 714 W | Channel Mode: | Enhancement |
Tradename: | HiPerFET | Series: | IXFH120N20P |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 31 ns |
Forward Transconductance - Min: | 40 S | Height: | 21.46 mm |
Length: | 16.26 mm | Product Type: | MOSFET |
Rise Time: | 35 ns | Factory Pack Quantity: | 30 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Type: | PolarHT HiPerFET Power MOSFET | Typical Turn-Off Delay Time: | 100 ns |
Typical Turn-On Delay Time: | 30 ns | Width: | 5.3 mm |
Unit Weight: | 0.211644 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IXFH120N20P is a high power MOSFET transistor designed for switching applications. It has a voltage rating of 200V and a current rating of 120A, making it suitable for high power and high frequency applications. The chip features low on-resistance and fast switching speed, making it ideal for power electronics and motor control systems.
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Equivalent
The equivalent products of IXFH120N20P chip are IRFH5210D, IRFH5202, and IRF6714L2TRPBF. These are power MOSFETs with similar specifications and characteristics, and can be used as alternative options in the circuit design. -
Features
IXFH120N20P is a MOSFET with a voltage rating of 200V, current rating of 120A, and a low on-state resistance. It is designed for high power applications and features fast switching speeds, high efficiency, and reliability. Additionally, it has a TO-247 package for easy mounting and heat dissipation. -
Pinout
The IXFH120N20P is a Power MOSFET with a pin count of 3. The functions of the pins are as follows: Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. -
Manufacturer
The manufacturer of the IXFH120N20P is IXYS Corporation. IXYS is a global company that specializes in the design and manufacture of power semiconductors, integrated circuits, and digital power products. With a focus on energy efficiency and sustainable technology, IXYS serves industries such as automotive, telecommunications, medical, and consumer electronics. -
Application Field
The IXFH120N20P is a power MOSFET designed for applications in power supplies, motor control, and inverters. It can also be used in industrial control systems, DC-DC converters, and battery chargers. Additionally, it is suitable for use in electronic devices, automotive applications, and power management systems. -
Package
The IXFH120N20P chip is a power MOSFET that comes in a TO-3PN package. It has a N-Channel enhancement mode and a maximum drain current of 120A and a maximum drain-source voltage of 200V.
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