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IGW60T120
With a TO247 package, the IGW60T120 is a robust N-channel IGBT transistor engineered to handle voltages up to 1
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Marcas: Infineon Technologies
Parte do fabricante #: IGW60T120
Ficha de dados: IGW60T120 Ficha de dados (PDF)
Pacote/Caso: TO-247-3
Status RoHS:
Condição de estoque: 8.032 peças, novo original
Tipo de Produto: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $5,624 | $5,624 |
10 | $4,943 | $49,430 |
30 | $4,527 | $135,810 |
100 | $4,179 | $417,900 |
Em estoque: 8.032 PCS
IGW60T120 Descrição geral
When it comes to handling high power levels, the IGW60T120 module is a standout performer. Its thermal interface enables efficient heat dissipation, allowing it to maintain peak performance even at elevated temperatures. The module is equipped with a range of protection features, including short circuit and overcurrent protection, to safeguard both the module and the connected system from potential damage. This level of reliability makes the IGW60T120 an indispensable component in a wide variety of industrial and commercial applications
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Series | TrenchStop® | Package | Tube |
Product Status | Obsolete | IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 100 A |
Current - Collector Pulsed (Icm) | 150 A | Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A |
Power - Max | 375 W | Switching Energy | 9.5mJ |
Input Type | Standard | Gate Charge | 280 nC |
Td (on/off) @ 25°C | 50ns/480ns | Test Condition | 600V, 60A, 10Ohm, 15V |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-3 | Supplier Device Package | PG-TO247-3-1 |
Base Product Number | IGW60T120 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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IGW60T120 is a high-power insulated gate bipolar transistor (IGBT) chip used for high voltage and high-frequency applications such as motor drives, power supplies, and inverters. With a maximum voltage rating of 1200V and a current rating of 60A, it offers high power density and efficiency in a compact package.
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Equivalent
Some equivalent products of the IGW60T120 chip are STGW60H60DF, K15A60U, and IRG4PC40W. These chips have similar characteristics and can be used as alternatives in various applications where the IGW60T120 is used. -
Features
IGW60T120 is an insulated gate bipolar transistor (IGBT) module featuring a high switching frequency of 60 kHz and a high power rating of 1200 V. It also has a low power loss and low driving power requirement, making it suitable for high power applications in industrial and automotive sectors. -
Pinout
The IGW60T120 is a Insulated Gate Bipolar Transistor (IGBT) module with a pin count of 6. The functions of the pins are as follows: Gate (G), Emitter (E), Collector (C), and three auxiliary pins for different electrical connections. -
Manufacturer
The manufacturer of the IGW60T120 is Infineon Technologies AG. They are a German-based semiconductor company that specializes in producing power and sensor systems for industrial and automotive applications. Infineon Technologies AG is known for its innovative and high-quality product offerings in the semiconductor industry. -
Application Field
The IGW60T120 is commonly used in industrial motor drives, inverters, welding equipment, and power supplies due to its high power efficiency and reliability. It can also be utilized in renewable energy applications such as solar inverters and wind turbines. Its advanced technology makes it suitable for various power electronics applications requiring high performance. -
Package
The IGW60T120 chip is in a module package, in the form of insulated gate bipolar transistor (IGBT), and has a size of 14.5 x 35.3 x 2.1 mm.
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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