Pedidos acima de
$5000FQPF10N60C
N-Channel 600 V 9.5A (Tc) 50W (Tc) Through Hole TO-220F-3
Marcas: Onsemi
Parte do fabricante #: FQPF10N60C
Ficha de dados: FQPF10N60C Ficha de dados (PDF)
Pacote/Caso: TO-220-3
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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FQPF10N60C Descrição geral
ON Semiconductor's FQPF10N60C is a top-of-the-line N-Channel enhancement mode power field effect transistor. Built using the company's proprietary planar stripe DMOS technology, this transistor delivers exceptional performance with its low on-state resistance, superior switching capabilities, and ability to withstand high energy pulses in avalanche and commutation modes. These features make it an ideal choice for applications such as high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. When you need a reliable and efficient solution for your power system, the FQPF10N60C is the perfect choice
Características
- 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
- Low Gate Charge (Typ. 44 nC)
- Low Crss (Typ. 18 pF)
- 100% Avalanche Tested
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 9.5 A |
Rds On - Drain-Source Resistance | 730 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 44 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 50 W | Channel Mode | Enhancement |
Series | FQPF10N60C | Brand | onsemi / Fairchild |
Configuration | Single | Fall Time | 77 ns |
Height | 16.3 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 69 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 144 ns | Typical Turn-On Delay Time | 23 ns |
Width | 4.7 mm | Part # Aliases | FQPF10N60C_NL |
Unit Weight | 0.068784 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FQPF10N60C is a high-performance N-channel MOSFET chip designed for power switching applications. It has a maximum current rating of 10A and a breakdown voltage of 600V, making it suitable for a variety of power supply, motor control, and lighting applications. Additionally, it features a low on-resistance and high switching speeds for efficient operation.
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Equivalent
The equivalent products of FQPF10N60C chip are STF10N60DM2, 10N60C, IRF10N60, and FQP10N60C. These chips have similar specifications and can serve as direct replacements for the FQPF10N60C in various applications. -
Features
FQPF10N60C is a 600V N-Channel MOSFET transistor with a continuous drain current of 10A, low on-resistance of 0.52 ohms, and fast switching speed. It has a TO-220F package, suitable for high power applications such as power supplies, motor control, and inverters. -
Pinout
FQPF10N60C is a MOSFET transistor with 3 pins: Gate (G), Drain (D), and Source (S). It has a pin count of 3 and is typically used for power switching applications due to its low on-resistance and high current handling capability. -
Manufacturer
FQPF10N60C is manufactured by Fairchild Semiconductor, which is a global semiconductor company specializing in power management, analog and mixed signal technologies. Fairchild Semiconductor provides solutions for a wide range of industries such as automotive, consumer electronics, industrial and telecommunications. They are known for their high-quality products and innovative technologies in the semiconductor industry. -
Application Field
FQPF10N60C is a MOSFET transistor commonly used in power supply applications, motor control, and lighting systems. It can also be found in inverters, converters, and DC-DC converters. Its high voltage and current-handling capabilities make it suitable for switching and amplification in a wide range of electronic devices. -
Package
The FQPF10N60C is a TO-220F package type power MOSFET chip with a form of through-hole mounting. It has a size of 10mm x 16mm x 4.5mm.
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