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$5000Infineon BSC035N04LSGATMA1
21A current rating in an 8-pin package
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Marcas: Infineon Technologies Corporation
Parte do fabricante #: BSC035N04LSGATMA1
Ficha de dados: BSC035N04LSGATMA1 Datasheet (PDF)
Pacote/Caso: PG-TDSON-8
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 2.827 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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BSC035N04LSGATMA1 Descrição geral
The BSC035N04LSGATMA1 MOSFET is a high-performance N-channel transistor that offers exceptional power handling capabilities. With a drain source voltage of 40V and an on-resistance of 2.9mohm, this MOSFET is optimized for efficiency and reliability. Supporting a current rating of 100A and a power dissipation of 69W, it is well-suited for high-power applications in various industries. The PG-TSDSON package style ensures easy installation and secure mounting, making it ideal for rugged environments. Operating within a wide temperature range of -55°C to +150°C, this MOSFET delivers consistent performance in extreme conditions. The 8-pin configuration allows for versatile circuit designs and enhanced functionality
Características
- Precision temperature sensing and control
- Excellent low-power operation capabilities
- Rapid data transfer rates guaranteed
- Precise current measurement and monitoring
- Advanced power-up sequencing optimization
- Sophisticated fault detection and recovery
Aplicativo
- Electric power systems
- Battery control units
- Industrial controls
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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RHoS | yes | PBFree | yes |
HalogenFree | yes |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The BSC035N04LSGATMA1 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) chip designed for high efficiency power control applications. It features a low on-state resistance and high current handling capacity, making it suitable for use in various power management systems such as DC-DC converters and motor control circuits.
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Equivalent
The equivalent products of BSC035N04LSGATMA1 chip are BSC010N04LSG, BSC025N04LSG, and BSC040N04LSG. These chips are all N-channel Power MOSFETs with similar specifications and features. -
Features
BSC035N04LSGATMA1 is a MOSFET with a drain-source voltage of 40V, continuous drain current of 60A, low on-resistance of 3.5mOhm, and a gate threshold voltage of 1.5V. It is designed for use in power management applications where high efficiency and high power density are required. -
Pinout
BSC035N04LSGATMA1 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a pin count of 8. It is designed for use in high power applications, such as motor control and power supplies. The main function of this component is to control the flow of current between the source and drain terminals based on the voltage applied to the gate terminal. -
Manufacturer
Infineon Technologies AG is the manufacturer of BSC035N04LSGATMA1. It is a German semiconductor manufacturing company that supplies a wide range of products including power semiconductors, sensors, and automotive and industrial ICs. Infineon Technologies AG is one of the largest semiconductor manufacturers in Europe and is a leading player in the global market. -
Application Field
BSC035N04LSGATMA1 is a silicon carbide power MOSFET suitable for high-power applications such as electric vehicle powertrains, renewable energy systems, industrial motor drives, and power supply units. It offers low on-resistance, high thermal conductivity, and high voltage capability, making it a reliable choice for demanding power electronics applications. -
Package
The BSC035N04LSGATMA1 chip is a Power-SO8 package type with a form factor of Surface Mount. It has dimensions of approximately 5mm x 6mm x 1mm.
Ficha de dados PDF
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