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FBGA-96
(202 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT41K512M16HA-125:A | High-density DDR3 DRAM with 8GB capacity and 512Mx16 configuration in FBGA packaging" | Alliance | 5.476 | Add to BOM |
| MT41K256M16LY-093:N | DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA | Alliance Memory | 6.554 | Add to BOM |
| H5TQ4G63AFR-RDC | Reliable and efficient DRAM module for data storage and processi | Sk Hynix Inc | 7.143 | Add to BOM |
| MT41K256M16LY-107:N | 4Gbit DDR3L SDRAM | Alliance Memory | 9.363 | Add to BOM |
| MT41K256M16HA-125 IT:E | A premium-grade DDR3 SDRAM chip for enterprise-level computing needs | Micron | 9.458 | Add to BOM |
| H5TQ4G63MFR-PBC | Reliable and efficient memory component for industrial control systems | Sk Hynix Inc | 5.419 | Add to BOM |
| MT41J128M16JT-125:K | Reliable 2GB DRAM module for data storage and processing | Micron Technology | 5.143 | Add to BOM |
| MT41K256M16TW-107 XIT:P | Advanced technology for improved processing efficiency | Micron Technology | 9.955 | Add to BOM |
| MT41K256M16TW-107:P | High-performance DDR memory for data-intensive applicatio | Micron | 8.001 | Add to BOM |
| MT41K128M16JT-125:K | 128MX16 FBGA DRAM DDR3 2G | Micron Technology | 7.815 | Add to BOM |
| MT40A1G16KNR-075:E | GB of capacity for large datasets and applicatio | Micron Technology | 9.458 | Add to BOM |
| MT40A256M16GE-075E:B | MT40A256M16GE-075E:B DDR4 4G 256MX16 Memory Module | Micron Technology | 9.458 | Add to BOM |
| K4B2G1646C-HCH9 | SAMSUNG | 7.404 | Add to BOM | |
| K4B1G1646G-BCK0 | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96 | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| H5TC8G63AMR-PBA | DDR DRAM, 512MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SKHYNIX | 6.354 | Add to BOM |
| MT41K512M16HA-125 IT:A | SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.75 ns 96-FBGA (9x14) | Alliance Memory | 9.458 | Add to BOM |
| K4B4G0846D-BCK0 | DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.5V 78-Pin FBGA | SAMSUNG | 6.554 | Add to BOM |
| MT40A512M16JY-083E:B | DRAM DDR4 8G 512MX16 FBGA | Micron Technology | 6.994 | Add to BOM |
| MT40A1G16RC-062E:B | High-capacity 16Gb DRAM | Micron Technology | 6.554 | Add to BOM |
| MT40A256M16GE-083E IT:B | Memory chip for computing devices | Micron Technology | 7.212 | Add to BOM |
| MT41J64M16TW-093:J | Low-Power Consumption and High-Speed Performance RAM Ch | Micron Technology | 9.458 | Add to BOM |
| MT41K256M16HA-107G:E | With a maximum frequency of . GHz, this chip is a speed demo | Micron Technology | 6.689 | Add to BOM |
| MT41K256M16HA-125:E | SDRAM TFBGA-96 RoHS MT41K256M16HA-125E | Micron Technology | 6.076 | Add to BOM |
| H5TC4G63CFR-RDA | High-Capacity RAM Module for Advanced Computing Applications | Sk Hynix Inc | 6.554 | Add to BOM |
| MT41K128M16JT-125IT:K | Advanced memory technology with 128M x 16 configuration | Micron Technology | 5.420 | Add to BOM |
| MT41K256M16TW-107 XIT:P TR | 20 Nanosecond 96-FBGA (8x14) Package | Micron Technology | 9.751 | Add to BOM |
| MT41J128M16JT-125:K TR | Memory Chip with DDR3 SDRAM Technology | Micron Technology | 7.279 | Add to BOM |
| MT41K256M16TW-093:P | DDR3 4GB 256Mx16 FBGA RAM MT41K256M16TW-093:P | Micron | 6.677 | Add to BOM |
| MT41K128M16JT-107:K | FBGA DRAM DDR3 2GB 128Mx16 | Micron Technology | 5.855 | Add to BOM |
| MT41K256M16TW-107 AIT:P | DDR DRAM Memory Module | Micron Technology | 8.066 | Add to BOM |
| D2516ECMDXGJDI-U | DDR3L DRAM 256MX16 CMOS PBGA96 | Kingston | 6.554 | Add to BOM |
| D2516ECMDXGJDI-CK | With its 2,133MHz clock speed, the D25 module provides fast access to stored data and rapid processing speeds | KINGSTON | 5.541 | Add to BOM |
| IM4G16D3FDBG-107I | speed 933MHz frequency for efficient performance | Intelligent Memory | 6.730 | Add to BOM |
| MT40A512M16JY-075E:B | Advanced memory module with 8GB capacity and FBGA package (52 characters) | MICRON TECHNOLOGY INC | 8.748 | Add to BOM |
| MT40A1G16WBU-083E:B | 16GB DDR4 DRAM memory module | Micron Technology | 9.458 | Add to BOM |
| MT40A512M16HA-083E:A | Memory technology suitable for high-performance applications | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| AS4C128M16D3-12BCN | 2 Gigabit DDR3 SDRAM | Alliance Memory | 9.458 | Add to BOM |
| D2516ECMDXGJD-U | DDR3L SDRAM 4Gbit 256Mx16 Memory Chip | KINGSTON TECHNOLOGY COMPANY INC | 6.554 | Add to BOM |
| D1216ECMDXGJD-U | '96 BALL FBGA DDR3L 1866 2Gb' | Kingston | 6.554 | Add to BOM |
| AS4C256M16D3LB-12BCN | With a configuration of 256M x 16, this DRAM module offers reliable performance and efficient data storage | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| MT41K64M16TW-107 XIT:J | Ideal for servers, workstations, and cloud computing environmen | Micron Technology | 9.458 | Add to BOM |
| MT40A256M16GE-062E IT:B | High-performance DDRSDRAM for demanding application | Micron Technology | 6.554 | Add to BOM |
| MT40A512M16HA-083E IT:A | DDR4 SDRAM Chip | Micron Technology | 9.458 | Add to BOM |
| MT40A512M16LY-062E AIT:E | Cutting-edge technology for improved performance | Micron Technology | 9.458 | Add to BOM |
| MT40A256M16LY-062E AIT:F | Advanced FBGA technology | Micron Technology | 9.458 | Add to BOM |
| MT40A256M16LY-062E IT:F | Advanced memory technology for enhanced system performanc | Micron Technology | 6.554 | Add to BOM |
| AS4C128M16D3LB-12BCN | With a speed of 12,000 MHz, this DDR3 SDRAM chip is ideal for data-intensive computing tasks | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| MT41K512M16HA-107:A | Operating voltage of 1.35 volts and a speed of 1866 megahertz | Micron Technology | 5.701 | Add to BOM |
| AS4C256M16D3B-12BCN | High-density DDR memory module with 256MX16 configuration and CMOS fabrication | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| MT40A1G16HBA-083E:A | CMOS technology | Micron Technology | 9.458 | Add to BOM |
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