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FBGA-96
(202 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT41J128M16JT-107:K | Compact and powerful memory solution | Alliance Memory | 9.458 | Add to BOM |
| MT41K256M16HA-107:E | Advanced DDR SDRAM for reliable data storage and transf | Micron Technology | 9.458 | Add to BOM |
| MT41J128M16JT-107G:K | Ultra-fast DDR3 SDRAM for demanding systems | Micron Technology | 6.554 | Add to BOM |
| H5TQ4G63MFR-H9C | Low-power consumption DDR DRAM ideal for data storage and processin | SK HYNIX INC | 6.554 | Add to BOM |
| AS4C256M16D3LB-12BAN | Low power DRAM module | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| AS4C256M16D3B-12BAN | x DRAM module with Hz clock speed for efficient processi | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| AS4C256M16D3LA-12BIN | Operating at 1600bps/pin data transfer rate | Alliance Memory | 9.458 | Add to BOM |
| AS4C256M16D3A-12BIN | Industrial-grade DRAM with low power consumptio | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| AS4C256M16D3A-12BCN | Fast ,MHz operating frequency ensures efficient data transfe | ALLIANCE MEMORY INC | 6.554 | Add to BOM |
| MT41K256M16TW-107 AUT:P TR | Fully Buffered Grid Array package design | Micron Technology | 6.554 | Add to BOM |
| K4AAG165WB-MCRC | FBGA-96 DRAM RoHS Compliant | Samsung Electronics | 6.554 | Add to BOM |
| MT41K256M16TW-107 AAT:P TR | Ultra-reliable DDRmemory solution for critical systems, featuring advanced error correction and reduced latenc | Micron Technology | 6.554 | Add to BOM |
| IS43QR16256A-083RBL | 4Gbit DDR4 SDRAM DRAM Chip with 256Mx16 Configuration | ISSI | 9.458 | Add to BOM |
| AS4C256M16D3L-12BIN | Low-voltage (1.35V) DRAM module designed for efficient power consumption | Alliance Memory | 9.458 | Add to BOM |
| NT5CC256M16CP-DII | L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TFBGA | NANYA | 6.554 | Add to BOM |
| AS4C128M16D3LA-12BIN | Synchronous DRAM 128MX16 CMOS PBGA96 FBGA96 AS4C128M16D3LA-12BIN | Alliance Memory | 9.458 | Add to BOM |
| K4B8G1646Q-MYK0 | 96FBGA with Lead-Free & Halogen-Free | SAMSUNG | 5.219 | Add to BOM |
| K4B4G1646D-BYMA | SAMSUNG | 6.554 | Add to BOM | |
| MT41K512M16HA-125 AIT | IC DRAM 8GBIT PARALLEL 96FBGA | MICRON | 6.554 | Add to BOM |
| K4W2G1646C-HC12 | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | SAMSUNG SEMICONDUCTOR INC | 6.554 | Add to BOM |
| K4W2G1646C-HC11 | DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96 | SAMSUNG | 4.571 | Add to BOM |
| H5TQ2G63BFR-PBC | DDR DRAM, 128MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK HYNIX INC | 6.554 | Add to BOM |
| MT41K128M16JT-107 IT | IC DRAM 2GBIT PAR 96FBGA | MICRON | 6.554 | Add to BOM |
| H5TQ1G63EFR-H9C | DDR DRAM, 64MX16, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK HYNIX INC | 6.554 | Add to BOM |
| K4AAG165WA-BCWE | DRAM Chip DDR4 SDRAM 16Gbit 1Gx16 1.2V 96-Pin FBGA | Samsung | 6.554 | Add to BOM |
| H5ANAG6NCMR-VKC | DDR DRAM, | SK HYNIX INC | 6.554 | Add to BOM |
| MT41K128M16JT-125 AAT | IC DRAM 2GBIT PARALLEL 96FBGA | MICRON | 6.554 | Add to BOM |
| MT41J128M16HA-125IT | DDR DRAM, | MICRON TECHNOLOGY INC | 6.554 | Add to BOM |
| MT41K256M16TW-107 IT:P | 256 Megabit x16 configuration for optimal performance | Micron Technology | 7.429 | Add to BOM |
| AS4C256M16D4A-75BIN | 256x16 configuration | Alliance Memory | 2.781 | Add to BOM |
| CY9AF155MABGL-GK9E1 | MCU MM-LEGACY MM | Infineon | 6.476 | Add to BOM |
| MT40A1G16KNR-062E:E | 16Gbit DDR4 SDRAM DRAM Chip 1Gx16 1.2V TFBGA Tray | Micron Technology | 7.346 | Add to BOM |
| MT41K64M16TW-107IT:J | High-performance DDR3L SDRAM chip featuring 1Gbit capacity and 64Mx16 configuration | Micron Technology | 3.324 | Add to BOM |
| MT41K256M16TW-107AAT:P | The MT41K256M16TW-107 AAT:P comes in trays for easy handling and installation, making it a convenient choice for various computing needs | Micron Technology | 5.318 | Add to BOM |
| MT41K128M16JT-125XIT:K | Get your hands on large quantities of DRAM parts and modules with the MT41K128M16JT-125 XIT:K package" | Micron Technology | 6.042 | Add to BOM |
| MT41K128M16JT-125AAT:K | This item is a 2GB DRAM DDR3 module with a memory organization of 128MX16, designed in a FBGA package for easy installation | Micron Technology | 6.199 | Add to BOM |
| MT40A1G16TB-062E:F | Industry standard with 96 pins | Micron Technology | 6.021 | Add to BOM |
| AS4C512M16D3LB-12BCN | Product code AS4C512M16D3LB-12BCN | Alliance Memory | 7.505 | Add to BOM |
| MT41K128M16JT-125 AAT:K | This item is a 2GB DRAM DDR3 module with a memory organization of 128MX16, designed in a FBGA package for easy installation | Micron Technology | 6.889 | Add to BOM |
| MT40A512M16LY-062E IT:E | Active bottom volatile synchronous IC memory | Micron Technology | 2.791 | Add to BOM |
| MT40A512M16TB-062E:R | With a 512M x 16 bit capacity | Micron Technology | 5.585 | Add to BOM |
| MT41K128M16JT-125 XIT:K | Get your hands on large quantities of DRAM parts and modules with the MT41K128M16JT-125 XIT:K package" | Micron | 7.121 | Add to BOM |
| H5ANAG6NCMR-XNC | NAND FLASH FBGA-96 ROHS | Sk Hynix | 6.101 | Add to BOM |
| H5AN8G6NAFR-VKC | High-speed data transfer and processing made possible by this modul | Sk Hynix | 5.033 | Add to BOM |
| H5AN8G6NAFR-UHC | High-density DDR4 SDRAM Chip with 8Gbit capacity | Sk Hynix | 2.117 | Add to BOM |
| IM8G16D3FFBG-107 | Ideal for servers, workstations, and high-end PCs requiring fast memory acces | Intelligent Memory | 2.441 | Add to BOM |
| KTDM8G4B632BGIBCT | Advanced DDR4 RAM solution for reliable and efficient data processing | Smart | 6.690 | Add to BOM |
| KTDM4G3C618BGCEAT | High-performance memory solution for demanding application | Smart | 2.914 | Add to BOM |
| KTDM4G4B626BGCEAT | Low-power consumption and high-speed data transfer make this a great choic | Smart | 7.350 | Add to BOM |
| AS4C64M16D3LC-12BINTR | Robust and reliable DRAM for harsh environments and extreme temperature | Alliance Memory | 5.488 | Add to BOM |
Outro pacote