Pedidos acima de
$5000vishay SIA921EDJ-T1-GE3
MOSFET 2P-CH 20V 4.5A SC70-6 / Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Vishay
Parte do fabricante #: SIA921EDJ-T1-GE3
Ficha de dados: SIA921EDJ-T1-GE3 Ficha de dados (PDF)
Pacote/Caso: SC-70-6
Tipo de Produto: FET, MOSFET Arrays
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
SIA921EDJ-T1-GE3 Descrição geral
Featuring a p-channel transistor polarity, the SIA921EDJ-T1-GE3 offers a 20V drain-source voltage (Vds) and a continuous drain current (Id) of 4.5A. Its on-resistance (Rds(On)) is 0.059Ohm, and it is designed for surface mount installation. The Rds(On) test voltage (Vgs) is 4.5V, and the threshold voltage (Vgs) is 1.4V. Importantly, this product does not comply with RoHS regulations
Características
Aplicativo
Load Switch, PA Switch and Battery Switch for Portable Devices |DC/DC Converters S1 S2Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
Transistor Polarity: | P-Channel | Number of Channels: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V | Id - Continuous Drain Current: | 4.5 A |
Rds On - Drain-Source Resistance: | 48 mOhms, 48 mOhms | Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V | Qg - Gate Charge: | 23 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 7.8 W | Channel Mode: | Enhancement |
Tradename: | TrenchFET, PowerPAK | Series: | SIA |
Packaging: | MouseReel | Brand: | Vishay Semiconductors |
Configuration: | Dual | Fall Time: | 10 ns, 10 ns |
Forward Transconductance - Min: | 11 S, 11 S | Height: | 0.75 mm |
Length: | 2.05 mm | Product Type: | MOSFET |
Rise Time: | 20 ns, 20 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Transistor Type: | 2 P-Channel |
Typical Turn-Off Delay Time: | 25 ns, 25 ns | Typical Turn-On Delay Time: | 20 ns, 20 ns |
Width: | 2.05 mm | Part # Aliases: | SIA921EDJ-GE3 |
Unit Weight: | 0.000988 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
![]() |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
![]() |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
![]() |
PayPal | cobrar taxa de serviço de 4,0%. |
![]() |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
![]() |
Western Union | charge US.00 banking fee. |
![]() |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
-
Etapa1 :produtos
-
Etapa2 :Embalagem a vácuo
-
Etapa3 :Saco antiestático
-
Etapa4 :Embalagem individual
-
Etapa5 :Caixas de embalagem
-
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
-
The SIA921EDJ-T1-GE3 is a high-speed, low-power, and compact serializer/deserializer (SerDes) chip developed by Silicon Labs. With data rates of up to 6.25 Gbps, this chip is ideal for applications such as high-speed data transmission in automotive, industrial, and consumer electronics. Its small form factor and low power consumption make it suitable for space-constrained and energy-efficient designs.
-
Equivalent
Some equivalent products of the SIA921EDJ-T1-GE3 chip are the TLP293-4, IL4135-4, and AQW217EHAX. These are optoelectronic components that perform similar functions and can be used as substitutes for the SIA921EDJ-T1-GE3 chip in certain applications. -
Features
SIA921EDJ-T1-GE3 is a low voltage, low on-resistance, dual-channel MOSFET with advanced Planar technology, integrated Schottky diode, and ESD protection. It is designed for power management applications in mobile devices and portable electronics. This MOSFET offers high efficiency, low power consumption, and fast switching speed. -
Pinout
SIA921EDJ-T1-GE3 is a dual-channel current sensor with a pin count of 8. It is used to measure the current flowing through two separate channels in electronic circuits. The sensor provides accurate current measurements for motor control, power management, and other applications. -
Manufacturer
The manufacturer of SIA921EDJ-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design and production of electronic components and semiconductors for a wide range of industries, including automotive, telecommunications, and consumer electronics. They are known for their high-quality products and innovative solutions in the electronics industry. -
Application Field
SIA921EDJ-T1-GE3 is commonly used in industrial automation, motor control, and power management applications. It is ideal for high-power systems that require reliable and efficient operation. This device can also be used in automotive and consumer electronics applications for power conversion and control. -
Package
The SIA921EDJ-T1-GE3 chip is a MOSFET transistor in a DFN package with 8 pins. The form factor is surface mount and the size is 3mm x 3mm, square.
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
-
Temos produtos ricos que podem atender às suas diversas necessidades.
-
A quantidade mínima de pedido começa em 1 unidade.
-
A menor taxa de envio internacional começa em US$ 0,00
-
365 dias de garantia de qualidade para todos os produtos