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$5000vishay SIA483DJ-T1-GE3
Tape and Reel format offering of a P-Channel MOSFET with a 30V maximum voltage and 12A current rating
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Marcas: Vishay
Parte do fabricante #: SIA483DJ-T1-GE3
Ficha de dados: SIA483DJ-T1-GE3 Ficha de dados (PDF)
Pacote/Caso: SC-70-6
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA483DJ-T1-GE3 Descrição geral
The SIA483DJ-T1-GE3 is a high-performance Power Field-Effect Transistor designed for various electronic applications. With a current rating of 12A and a voltage rating of 30V, this P-Channel Silicon MOSFET offers a low on-resistance of 0.021ohm, ensuring efficient power management. It is HALOGEN FREE AND ROHS COMPLIANT, making it environmentally friendly and safe for use in different industries. The leadless SC-70 package and POWERPAK-6 configuration provide easy installation and space-saving design, making it ideal for compact electronic devices
Características
- Surface mountable design
- Low inductance structure
- High density package
- Precise current control capability
Aplicativo
Smart Phones, Tablet PCs, Mobile Computing: - Battery Switches - Load Switches - Power Management - DC/DC ConvertersEspecificações
Parâmetro | Valor | Parâmetro | Valor |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC-70-6 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 16 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.2 V |
Qg - Gate Charge | 45 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 19 W |
Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
Series | SIA | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 8 ns |
Forward Transconductance - Min | 23 S | Height | 0.75 mm |
Length | 2.05 mm | Product Type | MOSFET |
Rise Time | 30 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 37 ns |
Width | 2.05 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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SIA483DJ-T1-GE3 is a high efficiency, low voltage synchronous buck regulator chip designed for power management applications. It features integrated overcurrent protection and a wide input voltage range, making it ideal for a variety of consumer electronics and industrial devices. With a compact form factor and high switching frequency, the SIA483DJ-T1-GE3 offers an efficient solution for voltage regulation in compact designs.
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Equivalent
Some equivalent products of the SIA483DJ-T1-GE3 chip include the IRF7832TRPBF, FDD5614P, and DMP3098LDM-7. These chips are MOSFET transistors with similar specifications and performance characteristics. -
Features
SIA483DJ-T1-GE3 is a high-efficiency, low-voltage, synchronous buck regulator with integrated high-side and low-side power MOSFETs. It features a wide input voltage range, ultra-low quiescent current, and is suitable for various applications including portable devices, wearable devices, and industrial systems. -
Pinout
The SIA483DJ-T1-GE3 is a dual N-channel MOSFET with a 1212 pin count. It is commonly used in power management applications for controlling high-frequency switching circuits. -
Manufacturer
SIA483DJ-T1-GE3 is manufactured by Vishay. Vishay is an American company that produces electronics components and technology solutions for a wide range of industries, including automotive, aerospace, and consumer electronics. They are known for their high-quality products and innovative technology solutions. -
Application Field
SIA483DJ-T1-GE3 is commonly used in applications such as power management in smartphones, tablets, laptops, and other portable devices. It can also be utilized in various voltage regulation and power distribution systems in automotive, industrial, and consumer electronics applications. -
Package
The SIA483DJ-T1-GE3 chip is a discrete semiconductor component in a surface mount package. It has a SOD-123 form factor with a size of approximately 2.8mm x 1.7mm x 1.35mm.
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