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$5000vishay SIA445EDJ-T1-GE3
MOSFET -20V [email protected] 12A P-Ch G-III
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Marcas: Vishay
Parte do fabricante #: SIA445EDJ-T1-GE3
Ficha de dados: SIA445EDJ-T1-GE3 Ficha de dados (PDF)
Pacote/Caso: SC-70-6
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA445EDJ-T1-GE3 Descrição geral
Offering superior performance and reliability, the SIA445EDJ-T1-GE3 MOSFET P-CH transistor is ideal for demanding applications where high current and low resistance are required. With a maximum operating temperature of 150°C and a minimum of -55°C, this transistor can withstand extreme temperature conditions without compromising its functionality. The PowerPAK SC70 case style offers efficient heat dissipation, while the 6-pin configuration allows for easy integration into circuit designs. The MSL 1 - Unlimited rating ensures that this transistor is suitable for a wide range of storage and assembly environments
Características
- High speed switching and low loss
- Multibit and high frequency operation
- Robust design for high reliability
- Economical solution with high performance
Aplicativo
Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Charger Switch - Load SwitchEspecificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V | Id - Continuous Drain Current: | 12 A |
Rds On - Drain-Source Resistance: | 16.5 mOhms | Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V | Qg - Gate Charge: | 48 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 19 W | Channel Mode: | Enhancement |
Tradename: | TrenchFET, PowerPAK | Series: | SIA |
Packaging: | MouseReel | Brand: | Vishay Semiconductors |
Configuration: | Single | Fall Time: | 20 ns |
Forward Transconductance - Min: | 29 S | Product Type: | MOSFET |
Rise Time: | 25 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 55 ns |
Typical Turn-On Delay Time: | 25 ns | Part # Aliases: | SIA445EDJ-GE3 |
Unit Weight: | 0.001446 oz |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SIA445EDJ-T1-GE3 is a power MOSFET chip designed for high efficiency, low on-resistance, and fast switching speeds in a compact package. It is suitable for use in a wide range of power management applications, such as voltage regulators, DC-DC converters, and motor control circuits. With its advanced design and performance capabilities, this chip is ideal for maximizing power efficiency and minimizing heat dissipation in electronic devices.
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Equivalent
The equivalent products of SIA445EDJ-T1-GE3 chip are SIA445EDJ-T1-GE4 and SIA445EDJ-T2-GE3. These chips have similar functionalities and specifications, making them suitable replacements for each other in various electronic applications. -
Features
SIA445EDJ-T1-GE3 is a MOSFET with a maximum drain-source voltage of 30V, a continuous drain current of 10A, and a low on-resistance of 8mΩ. It also features a small footprint and high power density, making it suitable for high-performance applications in power management and motor control. -
Pinout
SIA445EDJ-T1-GE3 has 6 pins and is a 12 V, 5 A low-voltage load switch IC. It is designed to protect power supply systems by providing a controlled turn-on and turn-off of devices to prevent damage and improve efficiency. -
Manufacturer
SIA445EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc., an American manufacturer of discrete semiconductors and passive electronic components. Vishay is a global company that provides components for a wide range of industries, including automotive, industrial, consumer, and telecommunications. -
Application Field
Some application areas for SIA445EDJ-T1-GE3 may include data centers, telecommunications equipment, industrial systems, and consumer electronics. This high-performance power MOSFET is suitable for a variety of power management applications where high reliability and efficiency are required. -
Package
The SIA445EDJ-T1-GE3 chip comes in a surface-mount package type, it is in a form of a dual MOSFET, and measures 2mm x 2mm in size.
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