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$5000ST SCTWA60N120G2-4
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
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Marcas: STMicroelectronics, Inc
Parte do fabricante #: SCTWA60N120G2-4
Ficha de dados: SCTWA60N120G2-4 Datasheet (PDF)
Pacote/Caso: HiP247-4
Tipo de Produto: Single FETs, MOSFETs
Status RoHS:
Condição de estoque: 3.214 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SCTWA60N120G2-4 Descrição geral
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Características
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 4 | feature-supplier-package | HIP-247 |
feature-standard-package-name1 | feature-cecc-qualified | ||
feature-esd-protection | feature-escc-qualified | ||
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SCTWA60N120G2-4 is a silicon carbide power MOSFET designed for high-frequency and efficiency applications. It offers low switch and conduction losses, making it suitable for use in power supplies, motor drives, and renewable energy systems. With a voltage rating of 1200V and a current rating of 60A, this chip is ideal for high-power applications that require fast switching speeds and reliable performance.
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Equivalent
The equivalent products of SCTWA60N120G2-4 chip are Infineon's IGBT modules with similar specifications, such as FF600R17ME4, FF450RA17KE3, and FF450RA17KF4. They are all high-power IGBT modules designed for industrial applications with similar current and voltage ratings. -
Features
Some features of SCTWA60N120G2-4 include a VCEsat of 1.95V, a maximum continuous collector current of 60A, a maximum collector-emitter voltage of 1200V, and a switching frequency of 20kHz. It is a silicon carbide trench Schottky diode with low switching losses and high efficiency. -
Pinout
The SCTWA60N120G2-4 is a silicon carbide power MOSFET with a TO-247-4 package. It has 3 pins: gate (G), source (S), and drain (D). It is designed for high-power applications due to its 1200V voltage rating and 60A current rating. -
Manufacturer
Infineon Technologies AG is the manufacturer of SCTWA60N120G2-4. Infineon is a German semiconductor manufacturer that focuses on power and chip card security. They specialize in providing products for applications such as automotive, industrial, and digital power control. -
Application Field
SCTWA60N120G2-4 is commonly used in high power applications such as industrial motor drives, power supplies, renewable energy systems, and electric vehicle charging. It is suitable for use in applications requiring high voltage and high current handling capabilities, making it a versatile choice for various power electronics applications. -
Package
The SCTWA60N120G2-4 chip is a power module with a TO-247 package type. It has a single form and a size of 30.0mm x 50.7mm.
Ficha de dados PDF
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