vishay IRF9Z10PBF

Part points

• The IRF9Z10PBF is a high-performance power MOSFET chip designed for use in various electronic devices. It features low on-resistance and high ruggedness, making it suitable for applications that require efficient power handling and switching capabilities. The chip operates at a voltage of up to 100V and delivers a maximum current of 12A, making it ideal for power amplifier circuits, AC-DC converters, and motor control applications.

• Equivalent

  Some equivalent products of the IRF9Z10PBF chip include the STP9NK70ZFP, RFP9N10L, and IPP9N10L. These devices have similar specifications and can be used as alternatives to the IRF9Z10PBF chip in various applications.

• Features

  The features of IRF9Z10PBF include a Vds (drain-source voltage) of 100V, an Id (continuous drain current) of 9A, a Rds(on) (on-state resistance) of 120mΩ, a gate-source voltage of ±20V, a low gate charge, and a compact TO-220 package.

• Pinout

  The IRF9Z10PBF is a power MOSFET transistor with a TO-220 package and a pin count of three. The pins are Drain (D), Gate (G), and Source (S). The function of this transistor is to control the flow of electrical current in a circuit, primarily as a switch or amplifier in power applications.

• Manufacturer

  The IRF9Z10PBF is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor and system solutions company that specializes in manufacturing and supplying a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive components. They serve various industries, including automotive, industrial, consumer, and communication sectors.

• Application Field

  The IRF9Z10PBF is a power MOSFET commonly used in various applications such as motor control, switching power supplies, LED lighting, battery charging, and other high-current switching applications. It is designed to handle high voltage and high current requirements efficiently.

• Package

  The IRF9Z10PBF chip is available in a TO-220 package type, which is a through-hole package with three pins. Its form is a MOSFET (metal-oxide-semiconductor field-effect transistor) and its size conforms to the standard TO-220 dimensions.