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$5000H5TQ2G63BFR-11C
High-quality DDR DRAM module for reliable data storage and processing
Marcas: SKHYNIX
Parte do fabricante #: H5TQ2G63BFR-11C
Ficha de dados: H5TQ2G63BFR-11C Ficha de dados (PDF)
Pacote/Caso: BGA
Tipo de Produto: Memória
Status RoHS:
Condição de estoque: 7.964 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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H5TQ2G63BFR-11C Descrição geral
DescriptionThe H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2 supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.
Características
- 1. It has a memory capacity of 2 gigabits (Gb).
- 2. It operates at a clock frequency of 800 MHz (DDR3-800).
- 3. The module interface is 96-ball FBGA (Fine-pitch Ball Grid Array).
- 4. It requires a supply voltage of 1.5 volts.
- 5. It supports burst lengths of 4 and 8.
Aplicativo
- DDR3 SDRAM modules like H5TQ2G63BFR-11C are commonly used in computer systems and other electronic devices where high-speed memory access is required. Some typical applications include:
- 1. Personal computers and laptops.
- 2. Servers and workstations.
- 3. Gaming consoles.
- 4. Networking devices.
- 5. Mobile devices like smartphones and tablets.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Manufacturer | HYNIX |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The H5TQ2G63BFR-11C is a 2 Gb DDR2 SDRAM chip designed for use in various electronic devices. It offers high-speed data transfer and low power consumption, making it ideal for applications requiring reliable memory performance. This chip is commonly used in mobile devices, consumer electronics, and networking equipment.
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Equivalent
Some equivalent products of the H5TQ2G63BFR-11C chip include the Micron MT29F2G08ABBEAHC-IT:D and the Samsung K4B2G0846B-BCK0 chips. These chips have similar specifications and performance characteristics, making them suitable alternatives for various electronic applications. -
Features
1. 2GB LPDDR2 SDRAM 2. 8-bit prefetch 3. High-speed operation: 333MHz (DDR667) 4. Low-voltage operation: 1.8V/1.8V 5. Fully synchronous; all signals referenced to a positive clock edge 6. Internal banks for concurrent operation 7. Data mask(DQM) 8. Single Data Rate architecture; two data transfers per clock cycle -
Pinout
The H5TQ2G63BFR-11C has a 168-ball FBGA package with a x16 interface. It is a 2Gb LPDDR3 SDRAM with a speed of 1600Mbps. The functions of this memory chip include providing high-speed data storage for mobile devices and low-power consumption during operation. -
Manufacturer
The manufacturer of the H5TQ2G63BFR-11C is SK Hynix. SK Hynix is a South Korean multinational semiconductor company specializing in memory chips. They produce a wide range of memory products including DRAM, NAND flash, and SSDs for various applications such as smartphones, computers, and servers. -
Application Field
The H5TQ2G63BFR-11C is commonly used in applications requiring high-speed random access memory such as smartphones, tablets, digital cameras, and other portable electronic devices. It is designed for high-performance computing tasks and is well-suited for applications that require low power consumption and high memory bandwidth. -
Package
The H5TQ2G63BFR-11C chip is in a BGA package with 169-ball form. It has a size of 14mm by 18mm.
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