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TSOP-II
(100 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| K4S561632N-LC75 | DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II | Samsung Electronics | 1.247 | Add to BOM |
| K4S561632J-UC75 | Superior performance and reliability in data storage and retrieval, making it an ideal choice for memory-intensive applications | Samsung Electro-Mechanics | 3.382 | Add to BOM |
| K6R4008V1D-UI10 | A high-performance memory solution designed for enhanced system reliability | Samsung Electro-Mechanics | 6.945 | Add to BOM |
| K4S561632E-TC75 | Advanced DRAM technology for superior data storage needs | Samsung Electronics | 7.813 | Add to BOM |
| MT48LC32M16A2TG-75IT | 32Mx16 512Mbit DRAM Chip SDR SDRAM 3.3V 54-Pin TSOP-II Tray | Micron Technology | 8.739 | Add to BOM |
| MT48LC16M16A2P-75 IT:D TR | With its parallel interface, this memory IC is ideal for applications requiring fast data transfer | Micron Technology | 7.640 | Add to BOM |
| NT5DS32M16ES-5T | This product, NT5DS32M16ES-5T, is a DDR1 memory chip with 512Mb of storage and a clock speed of 200MHz | Nanya Technology | 5.073 | Add to BOM |
| MT48LC4M32B2P-7 | Integrated circuit design for improved signal integrity and noise reductio | Micron Technology | 9.723 | Add to BOM |
| MT48LC2M32B2TG-6 | Plastic-encased SDRAM chip featuring 2M x 32 capacity and 86-pin TSSOP format | Micron Technology | 7.629 | Add to BOM |
| NT5DS32M16DS-5T | 66-Pin TSOP-II Package | Nanya Technology | 9.694 | Add to BOM |
| MT48LC8M16A2TG-7E | Fast access synchronous DRAM with low power consumptio | Micron Technology | 8.555 | Add to BOM |
| MT48LC8M16A2TG-75 | CMOS Synchronous DRAM offering 8MX16 capacity, 5.4ns speed, packaged in PDSO54 with a 0.400 INCH width and TSOP2-54 plastic build | Micron Technology | 7.183 | Add to BOM |
| MT48LC2M32B2P-6 | High-performance memory module for data-intensive tas | Micron Technology | 5.954 | Add to BOM |
| MT48LC16M16A2TG-75IT | High-speed 16MX16 Synchronous DRAM module | Micron Technology | 9.797 | Add to BOM |
| MT48LC16M16A2TG-75 | With its compact design and reliable performance | Micron Technology | 9.695 | Add to BOM |
| K6X4016C3F-TF55 | This product is a 256KX16 standard SRAM chip with a speed of 55ns, utilizing CMOS technology | Samsung Electronics | 7.981 | Add to BOM |
| K4S561632J-UC75000 | High-performance memory module for demanding computing applications | Samsung Electronics | 9.252 | Add to BOM |
| EV2A16AMNYU35 | Non-Volatile RAM with 3.3V Voltage | Teledyne e2v | 6.653 | Add to BOM |
| MT48LC16M16A2P-75:DTR | Compact and efficient SDRAM IC for parallel computi | Micron Technology | 2.804 | Add to BOM |
| MT48LC32M8A2P-7E:G | SDR SDRAM for high-speed memory | Micron Technology | 9.002 | Add to BOM |
| MT48LC32M16A2P-75ITC | Ultra-fast CMOS DDR SDRAM device for demanding computing needs." (58 characters) | Micron Technology | 6.404 | Add to BOM |
| IS42VM16160D-8TLI | DRAM chip designed for mobile devices | Integrated Silicon Solution Inc | 8.126 | Add to BOM |
| MT48LC16M16A2P-7EIT:G | Integrated circuit memory | Micron Technology | 7.077 | Add to BOM |
| MT48LC2M32B2TG-7IT | Mbit SDRAM Chip with Voltage Suppor | Micron Technology | 5.647 | Add to BOM |
| MT48LC4M32B2P-6A AAT:L TR | High-Quality, High-Capacity Memory IC for Industrial Use | Micron Technology | 2.119 | Add to BOM |
| MT48LC4M32B2P-6A AIT:L | Advanced memory solution for automotive systems, ensuring reliable data storage and retrieval | Micron Technology | 5.346 | Add to BOM |
| MT48LC64M8A2P-75 IT:C TR | High-performance DRAM chip for data-intensive applications, offering exceptional speed and capacit | Micron Technology | 5.400 | Add to BOM |
| MT48LC8M16A2P-7E:L TR | High-performance SDRAM chip for advanced computing applications | Micron Technology | 4.133 | Add to BOM |
| MT48LC4M16A2P-7E IT:G TR | High-capacity memory solution for demanding applications | Micron Technology | 6.519 | Add to BOM |
| N01L63W3AT25IT | High-performance SRAM chip for demanding applications, featuring single-cycle access and ns latency | Onsemi | 7.045 | Add to BOM |
| N01L63W2AT25I | Ultra-low-power 64K x 16 bit SRAM ideal for space-constrained applications | Onsemi | 2.076 | Add to BOM |
| MT48LC8M16A2TG-7E IT:G | Low-power consumption makes it ideal for portable device | Teledyne E2V | 5.980 | Add to BOM |
| MT48LC4M16A2P-7E:J TR | Ultra-fast x bit rate with low power consumpti | Micron Technology | 2.110 | Add to BOM |
| MT48LC32M8A2TG-75 IT:D | High-speed data transfer and storage for demanding systems requirements | Teledyne E2V | 2.862 | Add to BOM |
| MT48LC4M32B2P-6:G TR | High-performance memory solution for modern computing demands, boasting 128Mbit capacity and 3.3V power supply | Micron Technology | 5.628 | Add to BOM |
| MT48LC16M16A2P-7E:G TR | Reliable operation for stable system performan | Micron Technology | 4.331 | Add to BOM |
| K4H511638J-LCB3000 | Perfectly suitable for applications requiring large amounts of RAM with fast access time | Samsung Electronics | 3.542 | Add to BOM |
| K4S281632K-UC75T00 | Advanced SDRAM technology provides reliable and efficient operation in various industrial control, automotive, and consumer electronics device | Samsung Electronics | 3.080 | Add to BOM |
| K4H561638J-LCB3000 | Advanced DDR SDRAM technology for faster performance and capacit | Samsung Electronics | 3.449 | Add to BOM |
| K6R4016V1D-UI10T00 | Single-port asynchronous SRAM chip offering 256K bytes of storage with a 16-bit wide data bus and 44-pin TSOP-II package | Samsung Electronics | 6.319 | Add to BOM |
| K4H561638J-LCCC000 | High-performance DDR SDRAM chip offering bit capacity and voltage for reliable data transfe | Samsung Electronics | 6.177 | Add to BOM |
| CY7C1020CV33-15ZC | Fast access times and wide operating temperature range make it suitable for diverse use | Infineon Technologies Ag | 2.504 | Add to BOM |
| K6X8016C3B-UF55000 | Ultra-high performance SRAM for demanding computing task | Samsung Electronics | 4.530 | Add to BOM |
| MT48LC8M16A2TG-75IT:G | Reliable -Pin TSOP-II packaged DRAM solution with x architectur | Micron Technology | 2.565 | Add to BOM |
| MT48LC8M16A2TG-75 L IT:G | With its power supply and -pin TSOP-II package, this chip is designed to meet the demanding requirements of modern computing systems | Teledyne E2V | 5.473 | Add to BOM |
| MT48LC4M16A2TG-75:G | Ultra-reliable and efficient memory component suitable for a wide range of industrial and commercial application | Micron Technology | 4.273 | Add to BOM |
| MT48LC4M16A2TG-75 IT:G | Powerful memory solution for a wide range of industrie | Teledyne E2V | 3.395 | Add to BOM |
| MT48LC2M32B2TG-7:G | High-performance DRAM module for data storage and processing application | Micron Technology | 5.369 | Add to BOM |
| MT48LC16M8A2TG-75:G | Boost your system's performance with the MT48LC16M8A2TG-75:G's fast 3.3V operation | Micron Technology | 3.751 | Add to BOM |
| MT48LC16M16A2TG-7E D | Advanced memory solution for demanding applications requiring fast data transfer | Micron Technology | 4.773 | Add to BOM |
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