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SOT26
(20 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| ZXGD3006E6 | Efficient gate driver with a voltage rating of 40V and a current capacity of 10A, designed in SOT26 form factor | diodes incorporated | 5.467 | Add to BOM |
| ZXMN6A08E6 | High-efficiency power management solution for modern electronics | Diodes Incorporated | 6.884 | Add to BOM |
| ZXGD3005E6 | Suitable for Various Applications | diodes incorporated | 8.213 | Add to BOM |
| ZXGD3003E6 | This ZXGD3003E6 product is a high-speed non-inverting driver capable of delivering 5A output current | diodes incorporated | 6.931 | Add to BOM |
| ZXTD6717E6 | SOT26 15V 1.5A Complementary | diodes incorporated | 5.822 | Add to BOM |
| ZXTC2062E6 | SOT26 4A 20V Complementary | diodes incorporated | 8.860 | Add to BOM |
| ZXMP6A17E6 | Power Field-Effect Transistor | diodes incorporated | 9.056 | Add to BOM |
| ZXMP10A17E6 | P-Channel MOSFET with Enhanced Mode | diodes incorporated | 7.842 | Add to BOM |
| ZXMN10A08E6 | Power-efficient N-channel MOSFET | diodes incorporated | 5.211 | Add to BOM |
| ZXMN3A03E6 | MOSFET in enhancement mode with N-channel | diodes incorporated | 8.366 | Add to BOM |
| ZXMP3A17E6 | ZXMP3A17E6 is a P-channel enhancement mode MOSFET | diodes incorporated | 9.222 | Add to BOM |
| ZVN4525E6 | N-Channel Silicon Metal-oxide Semiconductor FET | diodes incorporated | 7.760 | Add to BOM |
| ZXT13P12DE6 | ZXT13P12DE6 is a PNP SUPERSOT-4 transistor | diodes incorporated | 7.440 | Add to BOM |
| DMP2240UDM | Power electronics component for reliable current managemen | diodes incorporated | 8.143 | Add to BOM |
| DMMT5551S | Dual NPN transistors | diodes incorporated | 8.945 | Add to BOM |
| ZXTD4591E6 | Bipolar Transistors - BJT | diodes incorporated | 9.680 | Add to BOM |
| ZXT13P20DE6 | Explore Product ZXT13P20DE6 - Bipolar Transistors (BJT) Information | diodes incorporated | 5.632 | Add to BOM |
| ZVP4525E6 | Silicon P-Channel Small Signal Field-Effect Transistor, 0.197A I(D), 250V, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | diodes incorporated | 5.502 | Add to BOM |
| DMMT5401 | Bipolar Transistors - BJT | MICRO COMMERCIAL COMPONENTS CORP | 6.335 | Add to BOM |
| DMMT5551 | Bipolar Transistors - BJT | MICRO COMMERCIAL COMPONENTS | 5.055 | Add to BOM |
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