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TSOP-II
(100 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| MT48LC16M16A2P-7EITD | bit SDR SDRAM chip with Mx configuratio | Micron Technology | 3.627 | Add to BOM |
| K6X8016T3B-UF55000 | Compact, reliable, and efficient x SRAM chip ideal for modern embedded systems and IoT device | Samsung Electronics | 5.743 | Add to BOM |
| K6X4008T1F-UF70T00 | With its advanced asynchronous architecture and fast access time of only 70ns | Samsung Electronics | 4.875 | Add to BOM |
| K6X4008T1F-UF70000 | Robust Low Voltage Operation for Reliable System Performanc | Samsung Electronics | 2.460 | Add to BOM |
| K6T4016C3C-TF70000 | Leading-edge technology enables efficient data processing and minimal latenc | Samsung Electronics | 2.312 | Add to BOM |
| K6R4016V1C-TC15000 | High-speed SRAM chip for asynchronous application | Samsung Electronics | 5.339 | Add to BOM |
| K6R4016C1D-UI10000 | Ultra-fast and reliable memory component for data-intensive operations | Samsung Electronics | 7.822 | Add to BOM |
| K4S641632N-LI75T00 | High-quality DRAM chip for high-performance computing applications | Samsung Electronics | 7.797 | Add to BOM |
| K4S641632K-UI60000 | Advanced chip technology for fast and reliable data transfer | Samsung Electronics | 7.455 | Add to BOM |
| K4S561632E-TC75000 | Mx bit DDRSDRAM module offering enhanced bandwidth and improved system performance for computing-intensive tasks | Samsung Electronics | 7.296 | Add to BOM |
| K4S560832J-UC75T00 | High-performance DRAM chip for demanding applicatio | Samsung Electronics | 4.073 | Add to BOM |
| K4S281632I-UC60T00 | A high-performance DRAM solution offering bit of storage capacity and operating voltage for reliable system integratio | Samsung Electronics | 2.512 | Add to BOM |
| K4S161622D-TC60000 | Featuring a compact TSOP-II package and -pin tray, this chip offers flexibility and ease of integration | Samsung Electronics | 3.139 | Add to BOM |
| K4H561638N-LCCC000 | *Memory Marvel**: Unleash the power of data storage with this high-performance DRAM chip | Samsung Electronics | 5.109 | Add to BOM |
| K4H561638N-LCB3000 | High-performance memory solution for demanding application | Samsung Electronics | 3.219 | Add to BOM |
| K4H561638J-LCB3T00 | High-performance memory module for reliable data storage and processin | Samsung Electronics | 7.292 | Add to BOM |
| K4H561638H-UCCC000 | Robust and reliable DDR SDRAM module with 256Mbit capacity, suitable for industrial, commercial, and residential applications | Samsung Electronics | 2.301 | Add to BOM |
| K4H561638H-UCB3T00 | High-performance memory solution for demanding application | Samsung Electronics | 2.088 | Add to BOM |
| K4H561638F-UCB3000 | High-performance memory module for efficient data processing | Samsung Electronics | 7.653 | Add to BOM |
| K4H511638J-LCCC000 | A high-quality DRAM chip featuring advanced architecture and efficient power consumption | Samsung Electronics | 2.256 | Add to BOM |
| K4H511638C-UCB3000 | Enhance system performance with this reliable bit DDR SDRAM ch | Samsung Electronics | 6.217 | Add to BOM |
| K4H510838J-LCCC000 | Reliable bit DDR SDRAM module for data-intensive projec | Samsung Electronics | 7.016 | Add to BOM |
| CY14B104N-ZS25XI | With its ultra-small footprint and reduced lead count | Infineon | 5.623 | Add to BOM |
| CY14B104L-ZS45XC | Enhance your system's performance with this high-capacity NVSRAM component featuring fast read/write speeds | Infineon | 2.336 | Add to BOM |
| K4H561638F-TCB3000 | Low-power, high-speed DDR SDRAM for modern computing needs | Samsung Electronics | 6.850 | Add to BOM |
| K6R4016V1D-TC10000 | Async single SRAM chip with x capacit | Samsung Electronics | 2.786 | Add to BOM |
| K6R4016C1D-TC10000 | A high-performance SRAM chip for fast data access and processing | Samsung Electronics | 7.207 | Add to BOM |
| K6R4008C1D-UI10T00 | High-density memory solution for modern systems | Samsung Electronics | 6.265 | Add to BOM |
| K4H511638D-UCB3000 | This DDR SDRAM module provides 512Mbit of storage space, ideal for systems needing large amounts of memory without sacrificing performance | Samsung Electronics | 7.941 | Add to BOM |
| K4S281632F-TC75000 | Advanced DRAM technology for improved performan | Samsung Electronics | 2.201 | Add to BOM |
| MT48LC4M32B2P-6 IT:G | Synchronous Dynamic Random-Access Memory IC | Micron Technology | 7.976 | Add to BOM |
| MT48LC8M16A2P-7E:G TR | 128 Megabit Capacity | Micron Technology | 5.681 | Add to BOM |
| MT48LC16M4A2P-75:G | SDR SDRAM 64Mbit DRAM Chip, 16Mx4, 3.3V, 54-Pin TSOP-II Tray | Micron Technology | 2.013 | Add to BOM |
| MT48LC16M16A2P-6A AAT:GTR | SDRAM Memory IC 256Mbit Parallel 167 MHz 5.4 ns 54-TSOP II | Micron Technology | 5.017 | Add to BOM |
| MT48LC2M32B2P-5:J TR | 3.3V 86-Pin TSOP-II Configuration | Micron Technology | 7.150 | Add to BOM |
| MT48LC2M32B2P-6A AAT:J TR | SDRAM Memory IC 64Mbit Parallel 167 MHz 5.4 ns 86-TSOP II | Micron Technology | 3.104 | Add to BOM |
| MT48LC16M16A2P-7E:G TR | SDRAM Memory IC 256Mbit Parallel 133 MHz 5.4 ns 54-TSOP II | Micron Technology | 6.454 | Add to BOM |
| MT48LC2M32B2P-7 IT:G TR | SDRAM Memory IC 64Mbit Parallel 143 MHz 5.5 ns 86-TSOP II | Micron Technology | 4.213 | Add to BOM |
| MT48LC2M32B2P-7 IT:G TR | SDRAM Memory IC 64Mbit Parallel 143 MHz 5.5 ns 86-TSOP II | Micron Technology | 4.514 | Add to BOM |
| K4H511638J-LCB3000 | DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.5V 66-Pin TSOP-II | Samsung Electronics | 5.794 | Add to BOM |
| K4S281632K-UC75T00 | DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TSOP-II T/R | Samsung Electronics | 6.411 | Add to BOM |
| MT48LC8M16A2TG-75 IT:G | SDRAM Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TSOP II | Micron Technology | 6.212 | Add to BOM |
| CY14B104L-ZS25XC | 44-Pin TSOP-II Tray for NVRAM NVSRAM storage solution | Infineon | 7.371 | Add to BOM |
| MT48LC64M8A2P-75:C TR | Synchronous DRAM: Single Data Rate (SDR) technology | Alliance Memory | 7.730 | Add to BOM |
| K6T8016C3M-TF7000 | SRAM Chip Async Single 5V 8M-bit 512K x 16 70ns 44-Pin TSOP-II T/R | Samsung Electronics | 3.758 | Add to BOM |
| K6T4016V3C-TF70000 | SRAM Chip Async Single 3.3V 4M-bit 256K x 16 70ns 44-Pin TSOP-II Tray | Samsung Electronics | 2.025 | Add to BOM |
| K6T4008C1B-VB70T00 | SRAM Chip Async Single 5V 4M-bit 512K x 8 70ns 32-Pin TSOP-II T/R | Samsung Electronics | 7.228 | Add to BOM |
| K4S561632H-TC75T00 | DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TSOP-II | Samsung Electronics | 6.151 | Add to BOM |
| K6T4008C1B-VB55000 | SRAM Chip Async Single 5V 4M-bit 512K x 8 55ns 32-Pin TSOP-II Tray | Samsung Electronics | 2.481 | Add to BOM |
| MT48LC16M8A2P-75G | SDRAM Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TSOP II | Micron Technology | 4.693 | Add to BOM |
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