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$5000
TOSHIBA SSM3K2615R,LF
Attributes: N Channel type, ROHS compliant, SSM3K2615R,LF model number, compact SOT-23F package
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Marcas: Toshiba
Parte do fabricante #: SSM3K2615R,LF
Ficha de dados: SSM3K2615R,LF Ficha de dados (PDF)
Pacote/Caso: SOT23F-3
Status RoHS:
Condição de estoque: 9.458 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
5 | $0,249 | $1,245 |
50 | $0,205 | $10,250 |
150 | $0,185 | $27,750 |
500 | $0,162 | $81,000 |
3000 | $0,142 | $426,000 |
6000 | $0,135 | $810,000 |
Em estoque: 9.458 PCS
SSM3K2615R,LF Descrição geral
The SSM3K2615R,LF is a state-of-the-art dual N-channel MOSFET that delivers outstanding performance in low-voltage applications. With its ultra-low threshold voltage of just 0.6V, this MOSFET is perfect for power-sensitive devices like smartphones and tablets, where efficient power management is crucial. Its maximum drain-source voltage of 20V and maximum drain current of 1.5A make it well-suited for handling moderate power loads, while its ultra-small TSSOP-6 package ensures compatibility with space-constrained designs. The device's low on-resistance of 0.35 ohms results in minimal power loss and high efficiency, contributing to extended battery life in portable devices. Additionally, the SSM3K2615R,LF features a fast switching speed, which not only reduces switching losses but also enhances overall system performance
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Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Manufacturer: | Toshiba | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SOT-23F-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 2 A |
Rds On - Drain-Source Resistance: | 300 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 800 mV | Qg - Gate Charge: | 6 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2 W | Channel Mode: | Enhancement |
Qualification: | AEC-Q101 | Tradename: | MOSV |
Series: | SSM3K2615 | Packaging: | MouseReel |
Brand: | Toshiba | Configuration: | Single |
Fall Time: | 50 ns | Height: | 0.9 mm |
Length: | 2.9 mm | Product Type: | MOSFET |
Rise Time: | 25 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 150 ns | Typical Turn-On Delay Time: | 30 ns |
Width: | 1.3 mm |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The SSM3K2615R,LF chip is a 20V N-channel MOSFET designed for low on-resistance in a small package. It is commonly used in power management applications such as load switches, battery protection circuits, and DC-DC converters. The chip features high efficiency and low power consumption, making it ideal for portable electronic devices.
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Equivalent
Some equivalent products to the SSM3K2615R,LF chip are Vishay's SI2303CDS-T1-GE3, Diodes Inc's DMG1026UW-7, and Nexperia's PSMN1R1-30YLC. These are all similar P-Channel MOSFETs with comparable specifications and performance characteristics. -
Features
Features of SSM3K2615R,LF: 1. N-channel enhancement mode MOSFET 2. Small footprint surface mount package (TSMT5) 3. Low threshold voltage of 0.7V 4. Low on-state resistance of 1.5 ohms 5. Low gate input capacitance for fast switching speeds. -
Pinout
The SSM3K2615R,LF is a Dual N-channel MOSFET with a pin count of 6 (SOT-353 package). It is suitable for low voltage, low current switching applications. The functions of the pins are: Pin 1 (Source1), Pin 2 (Gate1), Pin 3 (Drain1), Pin 4 (Source2), Pin 5 (Gate2), Pin 6 (Drain2). -
Manufacturer
The manufacturer of the SSM3K2615R,LF is Toshiba Semiconductor & Storage. Toshiba Semiconductor & Storage is a leading supplier of semiconductor and storage solutions, focusing on memory, microcontrollers, power devices, and optical semiconductors. The company is known for its innovative technologies and high-quality products in the electronics industry. -
Application Field
The SSM3K2615R,LF is a small signal MOSFET commonly used in applications such as power management, battery protection, load switching, and voltage regulation. It is ideal for portable electronic devices, smartphones, tablets, and other battery-powered applications where low on-resistance and low gate charge are critical for efficient performance. -
Package
The SSM3K2615R,LF chip is in a MOSFET package type, with a surface-mount form, and measures 2.9mm x 2.8mm x 1.0mm in size.
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