Pedidos acima de
$5000IS61NLP102436B-200B3LI
256Mb of reliable storage ideal for industrial control systems, automotive electronics
Marcas: INTEGRATED SILICON SOLUTION INC
Parte do fabricante #: IS61NLP102436B-200B3LI
Ficha de dados: IS61NLP102436B-200B3LI Ficha de dados (PDF)
Pacote/Caso: FBGA-165
Status RoHS:
Condição de estoque: 6.115 peças, novo original
Tipo de Produto: Memória
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $165,577 | $165,577 |
200 | $64,076 | $12815,200 |
500 | $61,825 | $30912,500 |
1000 | $60,712 | $60712,000 |
Em estoque: 6.115 PCS
IS61NLP102436B-200B3LI Descrição geral
Integrated Silicon Solution Inc. (ISSI) introduces the dynamic IS61NLP102436B-200B3LI synchronous DRAM module, a memory unit with a storage capacity of 1 Gb and a 36-bit data width. Running at a brisk 200 MHz, this module is optimized for mobile devices and other power-sensitive applications, thanks to its design that prioritizes low power consumption. The IS61NLP102436B-200B3LI boasts support for burst lengths of 2 or 4, with a choice of programmable READ or WRITE burst sequences for added flexibility in data processing. Its programmable CAS latency of 3 ensures efficient data access and transfer speeds, making it a reliable choice for high-performance computing needs. Additionally, the memory module features a self-refresh mode for power-saving benefits when the device is not in active use. Compliant with RoHS standards and compatible with a range of industry-standard interfaces, the IS61NLP102436B-200B3LI is a top-tier memory solution that prioritizes efficiency and sustainability
Características
- 100 percent bus utilization
- No wait cycles between Read and Write
- Internal self-timed write cycle
- Individual Byte Write Control
- Single R/W (Read/Write) control pin
- Clock controlled, registered address, data and control
- Interleaved or linear burst sequence control using MODE input
- Three chip enables for simple depth expansion and address pipelining
- Power Down mode
- Common data inputs and data outputs
- CKE pin to enable clock and suspend operation
- JEDEC 100-pin TQFP and 165-ball PBGA packages
- Power supply: NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
- Industrial temperature available
- Lead-free available
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | Part Package Code | BGA |
Package Description | TBGA, BGA165,11X15,40 | Pin Count | 165 |
Reach Compliance Code | compliant | ECCN Code | 3A991.B.2.A |
HTS Code | 8542.32.00.41 | Factory Lead Time | 16 Weeks |
Samacsys Manufacturer | Integrated Silicon Solution Inc. | Access Time-Max | 3.1 ns |
Clock Frequency-Max (fCLK) | 200 MHz | I/O Type | COMMON |
JESD-30 Code | R-PBGA-B165 | Length | 15 mm |
Memory Density | 37748736 bit | Memory IC Type | ZBT SRAM |
Memory Width | 36 | Number of Functions | 1 |
Number of Terminals | 165 | Number of Words | 1048576 words |
Number of Words Code | 1000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | -40 °C |
Organization | 1MX36 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TBGA |
Package Equivalence Code | BGA165,11X15,40 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE | Parallel/Serial | PARALLEL |
Power Supplies | 2.5/3.3,3.3 V | Qualification Status | Not Qualified |
Seated Height-Max | 1.2 mm | Standby Current-Max | 0.12 A |
Standby Voltage-Min | 3.14 V | Supply Current-Max | 0.26 mA |
Supply Voltage-Max (Vsup) | 3.465 V | Supply Voltage-Min (Vsup) | 3.135 V |
Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | INDUSTRIAL |
Terminal Form | BALL | Terminal Pitch | 1 mm |
Terminal Position | BOTTOM | Width | 13 mm |
Package | Tray | Product Status | Active |
Programmabe | Not Verified | Memory Type | Volatile |
Memory Format | SRAM | Memory Size | 36Mbit |
Memory Organization | 1M x 36 | Memory Interface | Parallel |
Clock Frequency | 200 MHz | Access Time | 3.1 ns |
Voltage - Supply | 3.135V ~ 3.465V | Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount | Package / Case | 165-TBGA |
Supplier Device Package | 165-TFBGA (13x15) |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The IS61NLP102436B-200B3LI chip is a low-power synchronous static RAM (SRAM) designed for use in various electronic devices. It features a capacity of 16 megabits and operates at a speed of 200 MHz. This chip is commonly used in applications where high performance and efficiency are crucial.
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Equivalent
Some equivalent products of IS61NLP102436B-200B3LI chip are IS61NLP102436B-200B2LI, IS61NLP102436B-200B4LI, and IS61NLP102436B-200B5LI. These chips are all part of the same family and have similar specifications and functionalities, making them suitable replacements for one another. -
Manufacturer
Integrated Silicon Solution Inc. (ISSI) is the manufacturer of the IS61NLP102436B-200B3LI. ISSI is a fabless semiconductor company that designs and markets high-performance integrated circuits for automotive, industrial, communications, and consumer electronics markets. They specialize in DRAM, SRAM, and flash memory, as well as analog and mixed-signal ICs. -
Application Field
The IS61NLP102436B-200B3LI is commonly used in networking devices, telecommunications equipment, industrial automation, and automotive applications that require high-speed and low-power SRAM memory for storing and accessing data quickly. Its compact size and low power consumption make it ideal for use in various embedded systems and electronic devices. -
Package
The IS61NLP102436B-200B3LI chip is available in a 119-ball BGA package. It comes in a 13.5mm x 13.5mm x 1.4mm form factor and has a size of 1024M x 36 bits.
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