As imagens são apenas para referência. Consulte as especificações do produto
Pedidos acima de
$5000
Infineon IDW30G65C5
High Voltage Schottky Diode with 30A Current Rating and TO-247 Housing
Marcas: Infineon
Parte do fabricante #: IDW30G65C5
Ficha de dados: IDW30G65C5 Ficha de dados (PDF)
Pacote/Caso: TO-247
Status RoHS:
Condição de estoque: 9.720 peças, novo original
Tipo de Produto: Single Diodes
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
| Quantidade | Preço unitário | Preço Externo |
|---|---|---|
| 1 | $20,832 | $20,832 |
| 200 | $8,062 | $1612,400 |
| 500 | $7,778 | $3889,000 |
| 1000 | $7,638 | $7638,000 |
Em estoque: 9.720 PCS
IDW30G65C5 Descrição geral
The IDW30G65C5 diode is a reliable and durable component that is built to withstand high temperatures and harsh operating conditions. Its TO-247 package provides mechanical stability and ease of mounting, making it a popular choice for various industrial and automotive applications
Características
- Vbr at 650V
- Improved Figure of Merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse
- recovery waveform
- Temperature independent
- switching behavior
- High operating temperature
- (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
- 10 years manufacturing of SiC diodes
- Benefts
- Higher safety margin against
- Overvoltage; best match with
- CoolMOS™ 650V products
- Improved efciency over all
- load conditions
- Increased efciency compared to
- Silicon Diode alternatives
- Reduced EMI compared to snappier
- Silicon diode reverse recovery
- waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- High quality know-how and capacity
- in SiC diode manufacture
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Manufacturer | Infineon | Product Category | Schottky Diodes & Rectifiers |
| RoHS | Details | Product | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Package / Case | TO-247-3 |
| Configuration | Single | Technology | SiC |
| If - Forward Current | 30 A | Vrrm - Repetitive Reverse Voltage | 650 V |
| Vf - Forward Voltage | 1.8 V | Ifsm - Forward Surge Current | 165 A |
| Ir - Reverse Current | 6.1 uA | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Series | CoolSiC |
| Tradename | CoolSiC | Brand | Infineon Technologies |
| Pd - Power Dissipation | 150 W | Product Type | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 240 | Subcategory | Diodes & Rectifiers |
| Part # Aliases | SP000937052 IDW30G65C5FKSA1 | Unit Weight | 1.340411 oz |
| Package | Tube | Product Status | Discontinued at Digi-Key |
| Voltage - DC Reverse (Vr) (Max) | 650 V | Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A | Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | Current - Reverse Leakage @ Vr | 1.1 mA @ 650 V |
| Capacitance @ Vr, F | 860pF @ 1V, 1MHz | Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-1 | Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDW30G65 |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
 |
PayPal | cobrar taxa de serviço de 4,0%. |
 |
Cartão de crédito | cobrar taxa de serviço de 3,5%. |
 |
Western Union | charge US.00 banking fee. |
 |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
-
![produtos]( "produtos")
Etapa1 :produtos
-
![Embalagem a vácuo]( "Embalagem a vácuo")
Etapa2 :Embalagem a vácuo
-
![Saco antiestático]( "Saco antiestático")
Etapa3 :Saco antiestático
-
![Embalagem individual]( "Embalagem individual")
Etapa4 :Embalagem individual
-
![Caixas de embalagem]( "Caixas de embalagem")
Etapa5 :Caixas de embalagem
-
![etiqueta de envio com código de barras]( "etiqueta de envio com código de barras")
Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
-
The IDW30G65C5 is a power semiconductor chip designed for high frequency and high efficiency applications. It is commonly used in switch mode power supplies, motor control, and other high voltage applications. The chip features low conduction and switching losses, making it suitable for power electronics in various industrial and consumer electronic devices.
-
Equivalent
The equivalent products of the IDW30G65C5 chip are the Infineon FF1650R17IE4 and FF300R17KE3. These chips feature similar specifications and can be used as substitute options for the IDW30G65C5 in various applications such as power electronics and motor control. -
Features
The IDW30G65C5 is a 650V Super Junction Insulated Gate Bipolar Transistor (IGBT) that offers low conduction and switching losses for high efficiency power conversion applications. It features a 30A continuous collector current, 120A pulsed collector current, and an ultra-low saturation voltage for improved performance and reliability. -
Pinout
The IDW30G65C5 is a 650V CoolMOS™ CFD7 SJ MOSFET with a TO-247-4 pin configuration. It has 3 pins - gate (G), drain (D), and source (S). The gate pin is used to control the switching of the MOSFET, while the drain pin carries the main current flow, and the source pin serves as the reference potential. -
Manufacturer
The manufacturer of the IDW30G65C5 is Infineon Technologies AG. Infineon Technologies is a semiconductor manufacturer that specializes in power and chip solutions for various applications, including automotive, industrial, and consumer electronics. They are a multinational company with headquarters in Germany and a global presence in the semiconductor industry. -
Application Field
The IDW30G65C5 is a silicon carbide power module suitable for applications such as motor drives, renewable energy systems, and industrial power supplies. Its high power density, high frequency capability, and robustness make it ideal for use in electric vehicles, solar inverters, and other high-power applications requiring efficient and reliable power conversion. -
Package
The IDW30G65C5 chip comes in a TO-247 package type, with a transistor form. The size of the chip is also 29.0mm x 11.0mm, making it suitable for power applications.
Oferecemos produtos de alta qualidade, serviço atencioso e garantia pós-venda
-
![produtos]( "produtos")
Temos produtos ricos que podem atender às suas diversas necessidades.
-
![quantity]( "quantity")
A quantidade mínima de pedido começa em 1 unidade.
-
![shipping]( "shipping")
A menor taxa de envio internacional começa em US$ 0,00
-
![garantia]( "garantia")
365 dias de garantia de qualidade para todos os produtos
