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$5000Infineon IDB06S60C
IDB06S60C diode
Marcas: Infineon
Parte do fabricante #: IDB06S60C
Ficha de dados: IDB06S60C Datasheet (PDF)
Pacote/Caso: D2PAK-2 (TO-263-2)
Tipo de Produto: Single Diodes
Status RoHS:
Condição de estoque: 2.316 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IDB06S60C Descrição geral
The IDB06S60C is a high-performance Schottky diode with a forward voltage drop of 0.58V at a continuous current of 6A. It has a maximum reverse voltage rating of 60V and a low reverse leakage current of 10uA at 25°C. The diode is housed in a TO-263 package with a high thermal conductivity for efficient heat dissipation.The IDB06S60C is designed for applications requiring fast switching speeds, low power dissipation, and high reliability. It is commonly used in power supplies, DC-DC converters, battery chargers, and motor control circuits. The diode is capable of handling high surge currents and has a rugged construction for reliable performance in harsh environments.The IDB06S60C features a low forward voltage drop, which helps to minimize power losses and improve overall system efficiency. It has a compact footprint and is easy to integrate into existing circuit designs. The diode is RoHS compliant and meets industry standards for quality and performance.
Características
- 600V-650V voltage rating
- 6A current rating
- Low conduction and switching losses
- Short circuit protected
- Integrated gate resistor
- Fast and soft inverse recovery diode
- High speed IGBT technology
- High short circuit capability
- Compact and lightweight design
Aplicativo
- Motor drives
- Solar inverters
- Welding equipment
- Battery chargers
- Inductive heating
- Fast switching applications
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Category | Schottky Diodes & Rectifiers | RoHS | Details |
| Product | Schottky Silicon Carbide Diodes | Mounting Style | SMD/SMT |
| Package / Case | D2PAK-2 (TO-263-2) | Configuration | Single |
| Technology | SiC | If - Forward Current | 6 A |
| Vrrm - Repetitive Reverse Voltage | 600 V | Vf - Forward Voltage | 1.5 V |
| Ifsm - Forward Surge Current | 46 A | Ir - Reverse Current | 700 nA |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Series | xDB06S60 | Brand | Infineon Technologies |
| Height | 4.57 mm (Max) | Length | 10.31 mm (Max) |
| Pd - Power Dissipation | 52 W | Product Type | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 1000 | Subcategory | Diodes & Rectifiers |
| Type | Schottky Diode | Width | 9.45 mm (Max) |
| Part # Aliases | SP000411538 IDB06S60CATMA1 |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
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Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
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Part points
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The IDB06S60C chip is a silicon carbide (SiC) diode module used in power electronic applications. It has a voltage rating of 600V and a current rating of 6A. The chip combines the high-speed switching capabilities of SiC with low conduction and switching losses, making it suitable for high-performance and energy-efficient designs.
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Equivalent
Some of the equivalent products of the IDB06S60C chip include the Infineon FSAM20SM60A, Mitsubishi CM300DY-24H, and Fuji 2MBI75U4H-120-50 chip. They are all power semiconductor devices used for switching applications with similar specifications and features as the IDB06S60C. -
Features
The IDB06S60C is a high-speed low-side IGBT driver that has under-voltage lockout protection and short circuit protection. It is able to handle high voltage levels and has a built-in desaturation detection circuit. With a minimum input pulse width of 200 ns, it is suitable for applications such as motor drives, inverters, and power suppliers. -
Pinout
The IDB06S60C is an IGBT (Insulated Gate Bipolar Transistor) module with a pin count of 7. The pin functions include two emitter pins (E1, E2), two collector pins (C1, C2), a gate pin (G), and two additional control pin (VG, CG) used for gate biasing and controlling protection characteristics. -
Manufacturer
Infineon Technologies is the manufacturer of the IDB06S60C. It is a German semiconductor company that focuses on producing and developing various automotive, industrial, and power electronics solutions. -
Application Field
The IDB06S60C is an insulated-gate bipolar transistor (IGBT) module used in power conversion and motor control applications. It can be applied in areas such as industrial machinery, renewable energy systems, electric vehicle inverters, and motor drives. With its high power handling capability and low saturation voltage, it is suitable for various high-power switching applications.
Ficha de dados PDF
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