Pedidos acima de
$5000ON FDP083N15A-F102
N-Channel 150 V 83A (Tc) 294W (Tc) Through Hole TO-220-3
Marcas: ON Semiconductor, LLC
Parte do fabricante #: FDP083N15A-F102
Ficha de dados: FDP083N15A-F102 Datasheet (PDF)
Pacote/Caso: TO-220-3
Status RoHS:
Condição de estoque: 2.180 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*Todos os preços estão em USD
Quantidade | Preço unitário | Preço Externo |
---|---|---|
1 | $3,220 | $3,220 |
10 | $2,855 | $28,550 |
50 | $2,638 | $131,900 |
100 | $2,420 | $242,000 |
500 | $2,319 | $1159,500 |
800 | $2,273 | $1818,400 |
Em estoque: 2.180 PCS
FDP083N15A-F102 Descrição geral
The FDP083N15A_F102 N-Channel MOSFET stands out thanks to its use of the innovative PowerTrench® process, which is specifically optimized to minimize on-state resistance and enhance switching performance. This results in a highly efficient and reliable MOSFET that is well-suited for a variety of industrial and power electronic applications. With its superior performance and robust design, the FDP083N15A_F102 is an excellent choice for demanding environments where efficiency and reliability are paramount
Características
- Compact package design with high current handling
- Low input capacitance for minimized ringing effect
- Wide operating temperature range from -40°C to 125°C
- Excellent thermal management and low noise generation
Aplicativo
- Low on-state resistance MOSFET
- Suitable for solar inverters
- Great for high power systems
Especificações
Parâmetro | Valor | Parâmetro | Valor |
---|---|---|---|
Status | Active | CAD Models | |
Compliance | PbAHP | Package Type | TO-220-3 |
Case Outline | 221A | MSL Type | NA |
MSL Temp (°C) | 0 | Container Type | TUBE |
Container Qty. | 800 | ON Target | Y |
Channel Polarity | N-Channel | Configuration | Single |
V(BR)DSS Min (V) | 150 | VGS Max (V) | ±20 |
VGS(th) Max (V) | 4 | ID Max (A) | 117 |
PD Max (W) | 294 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
RDS(on) Max @ VGS = 4.5 V (mΩ) | - | RDS(on) Max @ VGS = 10 V (mΩ) | 8.3 |
Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 64.5 |
Ciss Typ (pF) | 4645 | Pricing ($/Unit) | $2.0821Sample |
feature-category | Power MOSFET | feature-material | Si |
feature-process-technology | TMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 150 |
feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | |
feature-maximum-continuous-drain-current-a | 117 | feature-maximum-drain-source-resistance-mohm | 8.3@10V |
feature-typical-gate-charge-vgs-nc | 64.5@10V | feature-typical-gate-charge-10v-nc | 64.5 |
feature-typical-input-capacitance-vds-pf | 4645@25V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 294000 | feature-packaging | Tube |
feature-rad-hard | feature-pin-count | 3 | |
feature-supplier-package | TO-220 | feature-standard-package-name1 | TO |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Etapa1 :produtos
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Etapa2 :Embalagem a vácuo
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Etapa3 :Saco antiestático
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Etapa4 :Embalagem individual
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Etapa5 :Caixas de embalagem
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Etapa6 :etiqueta de envio com código de barras
Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDP083N15A-F102 chip is a power MOSFET transistor designed for high-performance applications. It features a low on-resistance and fast switching characteristics, allowing for efficient power management. With its advanced design and technology, this chip is suitable for various industrial and automotive applications, such as motor drives, DC-DC converters, and electronic power steering systems.
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Equivalent
The equivalent products of the FDP083N15A-F102 chip are FDP8636 and FDP2596. -
Features
The FDP083N15A-F102 is a power MOSFET transistor. It has a drain-source voltage rating of 150V, a continuous drain current of 80A, and a low on-resistance of 0.0083 ohms. It is designed for high-power applications and offers low conduction and switching losses, making it efficient in various industrial and consumer electronic circuits. -
Pinout
The FDP083N15A-F102 is a power MOSFET with a pin count of 3. Its primary function is to control the flow of electrical current. It is commonly used in power supply circuits, motor control, and other applications that require efficient power management. -
Manufacturer
The manufacturer of the FDP083N15A-F102 is Fairchild Semiconductor. It is an American company that specializes in the development, manufacturing, and marketing of power and signal management, logic, discrete, and custom semiconductor solutions for a variety of applications in diverse industries such as automotive, computing, consumer electronics, and industrial. -
Application Field
The FDP083N15A-F102 is a power MOSFET transistor, which can be used in various applications requiring high power switching and amplification, such as motor control, power supplies, electric vehicles, and solar inverters. -
Package
The FDP083N15A-F102 chip is a power MOSFET. It comes in a TO-220 package, which is a through-hole package type. The overall size of the chip in this package is approximately 10.4 mm x 16.5 mm.
Ficha de dados PDF
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A quantidade mínima de pedido começa em 1 unidade.
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A menor taxa de envio internacional começa em US$ 0,00
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