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Pedidos acima de
$5000
ON FDB33N25TM
D2PAK-packaged Power MOSFET with N-Channel configuration and UniFETTM technology
Marcas: Onsemi
Parte do fabricante #: FDB33N25TM
Ficha de dados: FDB33N25TM Datasheet (PDF)
Pacote/Caso: D2PAK-3
Status RoHS:
Condição de estoque: 2.161 peças, novo original
Tipo de Produto: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*Todos os preços estão em USD
| Quantidade | Preço unitário | Preço Externo |
|---|---|---|
| 1 | $1,804 | $1,804 |
| 10 | $1,552 | $15,520 |
| 30 | $1,396 | $41,880 |
| 100 | $1,236 | $123,600 |
| 500 | $1,099 | $549,500 |
| 800 | $1,068 | $854,400 |
Em estoque: 2.161 PCS
FDB33N25TM Descrição geral
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Características
Type: N-Channel MOSFET
Voltage Rating (VDS): 250 volts
Current Rating (ID): 33 amperes
RDS(on) (On-State Resistance): This value indicates the resistance between the drain and source when the MOSFET is in the "on" state.
Package: TO-263 (also known as D²PAK or DDPAK) which is a surface-mount package.
Gate Threshold Voltage (VGS(th)): The voltage at which the MOSFET begins to turn on.
Aplicativo
- This product is general usage and suitable for many different applications.
Especificações
| Parâmetro | Valor | Parâmetro | Valor |
|---|---|---|---|
| Product Name | FDB33N25TM | Product Type | Power MOSFET |
| Manufacturer | ON Semiconductor | Transistor Type | N-Channel |
| Drain-Source Voltage (Vdss) | 250V | Continuous Drain Current (Id) | 33A |
| Rds(on) (On-Resistance) | 0.095 ohms (max) | Gate-Source Threshold Voltage (Vgs(th)) | 2V (max) |
| Operating Temperature Range | -55°C to +175°C | Package / Case | TO-263 (D2PAK) |
| Packaging | Tape & Reel, Tube, and other options | feature-category | Power MOSFET |
| feature-material | feature-process-technology | UniFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 250 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 33 |
| feature-maximum-drain-source-resistance-mohm | 94@10V | feature-typical-gate-charge-vgs-nc | 36.8@10V |
| feature-typical-gate-charge-10v-nc | 36.8 | feature-typical-input-capacitance-vds-pf | 1640@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 235000 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | D2PAK |
| feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes | Series | UniFET™ |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 25 V | Power Dissipation (Max) | 235W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
Envio
| Tipo de envio | Taxa de envio | Tempo de espera | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias |
 |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
| Termos de pagamento | Taxa de mão | |
|---|---|---|
 |
Transferência bancária | cobrar taxa bancária de US$ 30,00. |
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PayPal | cobrar taxa de serviço de 4,0%. |
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Cartão de crédito | cobrar taxa de serviço de 3,5%. |
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Western Union | charge US.00 banking fee. |
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Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Todos os produtos serão embalados em saco antiestático. Envio com proteção antiestática ESD.
Fora da etiqueta da embalagem ESD serão utilizadas as informações da nossa empresa: Número da peça, marca e quantidade.
Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The FDB33N25TM is a power MOSFET chip used in various electronic applications. It is designed to handle high currents and voltage levels, making it suitable for power management, motor control, and switching applications. The chip features low on-resistance, fast switching characteristics, and high reliability. It is commonly used in industrial and automotive systems where efficient power handling is critical.
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Equivalent
There are no direct equivalent products for the FDB33N25TM chip as it is a unique component. However, you may consider looking at other N-channel MOSFET chips with similar voltage and current ratings from manufacturers such as Infineon, Texas Instruments, Vishay, or ON Semiconductor. -
Features
The FDB33N25TM is a power MOSFET transistor with a VDS rating of 250V, a continuous drain current of 33A, and a low on-resistance of 0.041Ω. It is designed for high power applications with high efficiency and can handle large current flows. -
Pinout
The FDB33N25TM is a MOSFET transistor with a TO-263 package. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the FDB33N25TM is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductor devices and integrated circuits in various industries such as automotive, consumer electronics, industrial, and more. -
Application Field
The FDB33N25TM is a power MOSFET transistor commonly used in various applications such as switching power supplies, motor control, and power management in electronics. It is particularly well-suited for high-voltage and high-power applications where efficiency and reliability are important factors. -
Package
The FDB33N25TM chip has the TO-263 package type, a VDSS form, and a size of 10.16mm x 7.49mm.
Ficha de dados PDF
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Exceptional customer service and high-quality components. Very satisfied.