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SOT227-4
(101 partes no total)Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
---|---|---|---|---|
APT12040JVR | Described as APT12040JVR, this MOSFET operates at 1 | Microchip | 7.754 | Add to BOM |
IXTN210P10T | High-power P-channel MOSFET suitable for applications requiring high voltage and current | Littelfuse | 5.780 | Add to BOM |
IXFN120N20 | certified SOT-227B MOSFETs | Littelfuse | 5.849 | Add to BOM |
IXFN130N30 | Information on SOT-227B MOSFETs ROHS | IXYS CORP | 9.174 | Add to BOM |
IXFN60N80P | 4-pin SOT-227B, IXYS IXFN60N80P N-channel MOSFET Transistor & Diode, 800V, 53A | Littelfuse | 9.458 | Add to BOM |
IXFN400N15X3 | MOSFETs in SOT-227B package, meeting ROHS requirements, known as IXFN400N15X3 | IXYS | 9.458 | Add to BOM |
APT2X61S20J | Diode Array 2 Independent 200 V 75A Chassis Mount ISOTOP | Microchip Technology | 7.075 | Add to BOM |
APT2X101S20J | Schottky Diodes & Rectifiers SCHOTTKY Discrete Rectifier 200 V 100 A Dual Parallel SOT-227 | Microchip Technology | 5.634 | Add to BOM |
IXTN62N50L | IXTN62N50L Power MOSFET | IXYS | 9.458 | Add to BOM |
IXFN360N15T2 | N-channel MOSFET with a 150V rating and 310A current capacity in a SOT227B package | IXYS | 9.458 | Add to BOM |
IXFN48N50U2 | N-channel MOSFET rated at 500 volts and 48 amps, packaged in SOT-227B | IXYS | 6.466 | Add to BOM |
IXFN55N50F | High-Performance IXFN55N50F 500V Semiconductor Module | IXYS | 9.458 | Add to BOM |
IXFN80N50Q2 | Discrete semiconductor module with 80 Amps, 500V, and 0.06 Rds | IXYS | 9.458 | Add to BOM |
IXFN320N17T2 | High-performance MOSFETs that feature a SOT-227B package and meet ROHS standards | IXYS | 9.458 | Add to BOM |
APT8030JVFR | APT8030JVFR - 800V 30 Ohm FREDFET MOSFET Module in SOT-227 Package | Microchip | 9.458 | Add to BOM |
APT2X61DC120J | SiC Power Rectifier Module | Microchip | 9.458 | Add to BOM |
APT10025JVR | Perfect for designers seeking a reliable and efficient solution for DC-DC conversion, motor control, or other high-current application | Microchip | 5.580 | Add to BOM |
APT10050JN | SOT-227 N-Channel MOSFET, 1KV, 20.5A | microchip | 9.394 | Add to BOM |
APT10025JVFR | High-efficiency power transistor | Microchip | 9.458 | Add to BOM |
APT10026JN | High-voltage N-channel MOSFET transistor with 33A current capacity, packaged in a 4-pin SOT-227 enclosure | microchip | 9.101 | Add to BOM |
APT8011JFLL | 4-Pin SOT-227 N-Channel 800V 51A Trans MOSFET | Microchip | 9.458 | Add to BOM |
GA200SA60UP | High power dissipation capability of 500,000mW | vishay | 8.796 | Add to BOM |
GA200SA60SP | GA200SA60SP: Insulated Gate Bipolar Transistor (IGBT) Module, N-Channel, 600 Volts, 342 Amps, 781 Kilowatts | vishay | 7.044 | Add to BOM |
VS-GA250SA60S | Specifications: VS-GA250SA60S is a robust IGBT module designed for demanding tasks | Vishay General Semiconductor - Diodes Division | 7.946 | Add to BOM |
GA100NA60U | Ultrafast IGBT Transistors (GA100NA60U) Designed for High-Side Chopper Circuits (600V) | vishay | 5.124 | Add to BOM |
GB75DA120UP | ROHS Compliant Package-4 Insulated Gate Bipolar Transistor | vishay | 9.182 | Add to BOM |
IXFN70N120SK | Reliable and robust for demanding power management need | IXYS | 9.458 | Add to BOM |
IXFN50N120SK | Advanced power conversion technology for high-reliability applications | IXYS | 9.458 | Add to BOM |
APT75GP120J | IGBT Module for N-Channel Transistor with 1200V Rating | Microchip | 5.516 | Add to BOM |
IXTN21N100 | 21 Amps and 100V rated discrete semiconductor modules with a resistance of 0.55 Ohm for optimal performance | Ixys | 6.569 | Add to BOM |
IXTN30N100L | 227B Trans MOSFET N-Channel 1KV 30A | Ixys | 5.630 | Add to BOM |
IXFN50N50 | With a 50 Amps capacity and 500V rating, the IXFN50N50 Discrete Semiconductor Module has a low 0.1 Ohm Rds | Ixys | 6.569 | Add to BOM |
GA100NA60UP | 600V 50A IGBT Transistors | Vishay | 5.442 | Add to BOM |
DBA200UA60 | Mounted Diode Array Offering 2 Independent Channels for 600 V 100A Operations | Sanrex | 7.765 | Add to BOM |
IXFN150N15 | N-Channel 150 V 150A (Tc) 600W (Tc) Chassis Mount SOT-227B | IXYS | 9.458 | Add to BOM |
IXTN79N20 | N-Channel 200 V 85A (Tc) 400W (Tc) Chassis Mount SOT-227B | IXYS CORP | 6.904 | Add to BOM |
IXFN21N100Q | With a 21 Amps rating, 1000V voltage capability, and low Rds of 0.5, IXFN21N100Q is a reliable discrete semiconductor module | Littelfuse | 7.142 | Add to BOM |
IXFN80N50 | IXFN80N50 SOT-227B MOSFETs ROHS | Littelfuse | 3.725 | Add to BOM |
APT2X61DQ100J | Diode Switching 1KV 60A SOT-227 4-Pin | Microchip | 2.559 | Add to BOM |
APT8024JLL | ISOTOP, 0.24 ohm, 29A, 800V | Microchip | 7.022 | Add to BOM |
TGHGCR0100FE | Precise control of current flow with minimal distortion | Ohmite | 2.002 | Add to BOM |
TGHGCR1000FE | Robust design ensures reliable operation even under heavy load | Ohmite | 6.527 | Add to BOM |
IXFN520N075T2 | Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET | Ixys | 4.941 | Add to BOM |
IXFN240N15T2 | High-voltage switching solution for efficient power contro | Ixys | 7.730 | Add to BOM |
TGHGCR0200FE | High-precision thermal resistor for precise temperature sensin | Ohmite | 2.877 | Add to BOM |
TGHGCR0020FE | Robust current measurement at high load | Ohmite | 2.629 | Add to BOM |
TGHGCR0010FE | This through-hole resistor offers precise sensing and reliable operation under heavy loads | Ohmite | 2.811 | Add to BOM |
TGHGCR0500FE | 50 mOhms ±1% 100W Thick Film Chassis Mount Resistor | Ohmite | 7.915 | Add to BOM |
TGHGCR0005FE | 500 µOhms ±1% 100W Thick Film Chassis Mount Resistor | Ohmite | 2.510 | Add to BOM |
IXFN70N100X | X-Class Hiperfet Power MOSFET | IXYS | 9.458 | Add to BOM |
Outro pacote