SPANSION S29CD016G

S29CD016G Descrição geral

General DescriptionThe S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/O™ manufactured on 170 nm Process Technology.Distinctive CharacteristicsArchitecture Advantages■ Simultaneous Read/Write operations   — Read data from one bank while executing erase/      program functions in other bank   — Zero latency between read and write operations   — Two bank architecture: large bank/small bank      75%/25%■ User-Defined x32 Data Bus■ Dual Boot Block   — Top and bottom boot sectors in the same device■ Flexible sector architecture   — CD032G: Eight 2K Double Word, Sixty-two 16K      Double Word, and Eight 2K Double Word sectors   — CD016G: Eight 2K Double Word, Thirty-two 16K      Double Word, and Eight 2K Double Word sectors■ Secured Silicon Sector (256 Bytes)   — Factory locked and identifiable: 16 bytes for secure,      random factory Electronic Serial Number; Also know      as Electronic Marking■ Manufactured on 170 nm Process Technology■ Programmable Burst interface   — Interfaces to any high performance processor   — Linear Burst Read Operation: 2, 4, and 8 double      word linear burst with or without wrap around■ Program Operation   — Performs synchronous and asynchronous write      operations of burst configuration register settings      independently■ Single power supply operation   — Optimized for 2.5 to 2.75 volt read, erase, and   program operations■ Compatibility with JEDEC standards (JC42.4)   — Software compatible with single-power supply Flash   — Backward-compatible with AMD/Fujitsu Am29LV/      MBM29LV and Am29F/MBM29F flash memoriesPerformance Characteristics■ High performance read access   — Initial/random access times of 48 ns (32 Mb) and 54      ns (16 Mb)   — Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)■ Ultra low power consumption   — Burst Mode Read: 90 mA @ 75 MHz max   — Program/Erase: 50 mA max   — Standby mode: CMOS: 60 µA max■ 1 million write cycles per sector typical■ 20 year data retention typical■ VersatileI/O™ control   — Generates data output voltages and tolerates data      input voltages as determined by the voltage on the      VIO pin   — 1.65 V to 3.60 V compatible I/O signalsSoftware Features■ Persistent Sector Protection   — Locks combinations of individual sectors and sector      groups to prevent program or erase operations      within that sector (requires only VCC levels)■ Password Sector Protection   — Locks combinations of individual sectors and sector      groups to prevent program or erase operations      within that sector using a user-definable 64-bit      password■ Supports Common Flash Interface (CFI)■ Unlock Bypass Program Command   — Reduces overall programming time when issuing      multiple program command sequences■ Data# Polling and toggle bits   — Provides a software method of detecting program or      erase operation completionHardware Features■ Program Suspend/Resume & Erase Suspend/   Resume   — Suspends program or erase operations to allow      reading, programming, or erasing in same bank■ Hardware Reset (RESET#), Ready/Busy# (RY/   BY#), and Write Protect (WP#) inputs■ ACC input   — Accelerates programming time for higher throughput      during system production■ Package options   — 80-pin PQFP   — 80-ball Fortified BGA   — Pb-free package option also available   — Known Good Die