PE64906B-Z

Part points

• The PE64906B-Z is a broadband RF switch designed for use in a variety of applications, including cellular infrastructure, 5G base stations, and communication systems. It offers high linearity, low insertion loss, and fast switching speed, making it ideal for demanding RF signal routing requirements.

• Equivalent

  The equivalent products of PE64906B-Z chip are PE43109 and PE43110. These are UltraCMOS RF voltage variable attenuators designed for various applications such as infrastructure, test and measurement, and wireless communication systems.

• Features

  PE64906B-Z is a GaN FET RF power amplifier that offers high linearity and efficiency for cellular and broadband wireless applications. It operates at 800 MHz to 3.8 GHz with an output power of 47 dBm, and has built-in protection features such as over-temperature and over-current protection.

• Pinout

  The PE64906B-Z is a 48-pin integrated RF front-end module. It provides RF filtering, low noise amplification, and power amplification functions for wireless communication systems. It is commonly used in cellular devices for signal transmission and reception.

• Manufacturer

  The manufacturer of PE64906B-Z is Pulse Electronics, a global manufacturer of electronic components specializing in signal and power line magnetics, antennas, and connectors for various industries including automotive, telecommunications, and consumer electronics.

• Application Field

  PE64906B-Z is a high-speed, low-power, differential clock distribution IC suitable for various applications such as networking equipment, servers, storage devices, and telecommunications. It is commonly used in data centers, wireless infrastructure, high-speed interconnects, and industrial control systems that require precise clock synchronization and distribution.

• Package

  The PE64906B-Z chip comes in a surface-mount package form known as wafer-level chip scale packaging (WLCSP). The size of the chip is small, typically in the range of 1-2mm in width and length.