PC28F128P33BF60D

PC28F128P33BF60D Descrição geral

The PC28F128P33BF60D is an industry-leading 128Mb parallel NOR Flash memory device from Intel, designed to deliver top-notch performance and reliability for a variety of applications. With a wide operating voltage range of 1.8V to 3.6V, it offers flexibility and adaptability to different power environments, making it suitable for a range of systems. Its organization into multiple blocks and sectors provides flexible data storage, meeting the diverse needs of embedded systems, automotive electronics, and industrial equipment. Operating at a clock frequency of 33MHz and with a 60ns random access time, it delivers fast read and program operations, ensuring efficient performance in time-critical applications. The parallel interface simplifies integration into host systems, providing seamless connectivity and communication for the system. Its high reliability and robustness make it well-suited for environments that demand non-volatile storage with extended endurance and data retention, providing a dependable solution for mission-critical systems. Additionally, its support for advanced features such as hardware data protection and sector locking enhances security and data integrity, adding an extra layer of protection to its performance

Características

• High performance
• — 85/88 ns initial access
• — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
• — 25 ns asynchronous-page read mode
• — 4-, 8-, 16-, and continuous-word burst mode
• — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
• — 1.8 V buffered programming at 7 µs/byte (Typ)
• Architecture
• — Multi-Level Cell Technology: Highest Density at Lowest Cost
• — Asymmetrically-blocked architecture
• — Four 32-KByte parameter blocks: top or bottom configuration
• — 128-KByte main blocks
• Voltage and Power
• —VCC(core) voltage: 1.7 V – 2.0 V
• —VCCQ (I/O) voltage: 1.7 V – 3.6 V
• — Standby current: 55 µA (Typ) for 256-Mbit
• — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
• Quality and Reliability
• — Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
• — Minimum 100,000 erase cycles per block
• — ETOX™ VIII process technology (130 nm)
• Security
• — One-Time Programmable Registers:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
• — Selectable OTP Space in Main Array:
• 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
• — Absolute write protection: VPP= VSS
• — Power-transition erase/program lockout
• — Individual zero-latency block locking
• — Individual block lock-down
• Software
• — 20 µs (Typ) program suspend
• — 20 µs (Typ) erase suspend
• —Intel® Flash Data Integrator optimized
• — Basic Command Set and Extended Command Set compatible
• — Common Flash Interface capable
• Density and Packaging
• — 64/128/256-Mbit densities in 56-Lead TSOP package
• — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
• — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
• — 16-bit wide data bus

Especificações