M50100THA1600

Part points

• The M50100THA1600 is a high-power, high-frequency RF transistor chip designed for use in applications such as power amplifiers and RF generators. It operates at a frequency range of 1.6-1.8 GHz and offers excellent power gain and efficiency. This chip is ideal for demanding RF applications that require high performance and reliability.

• Equivalent

  An equivalent product of the M50100THA1600 chip is the C50100THA1600 chip. Both chips are manufactured by the same company, have similar specifications, and can be used as substitutes for each other in various electronic applications.

• Features

  M50100THA1600 is a high power IGBT module with a maximum collector current of 100A, a voltage of 1600V, and a low stray inductance. It also features a built-in temperature sensor and a high short circuit capability.

• Pinout

  The M50100THA1600 is a 16-pin insulated gate bipolar transistor (IGBT) module with a current rating of 100A and a voltage rating of 1600V. It is commonly used in high power switching applications such as motor drives and power supplies.

• Manufacturer

  M50100THA1600 is manufactured by Mitsubishi Electric Corporation, a multinational electronics and electrical equipment manufacturing company. It specializes in producing a wide range of products including power semiconductors, air conditioning systems, and automotive equipment. Mitsubishi Electric Corporation is known for its high-quality products and innovative technology solutions.

• Application Field

  M50100THA1600 is a high-power IGBT module suitable for applications such as motor drives, traction systems, power supplies, and renewable energy systems. It can be used in industrial applications where high efficiency and reliability are required.

• Package

  The M50100THA1600 chip is a Thyristor module with a TO-200AB package type, single-phase, half-controlled bridge with metal baseplate form, and a size of 64 x 117 mm.