Renesas HAT1026R-EL-E

Part points

• The HAT1026R-EL-E chip is a high-frequency silicon PNP transistor designed for use in low-noise amplifier applications. It provides excellent performance with high gain and low noise figure characteristics. With its compact size and easy integration, this chip is suitable for various applications in the field of wireless communication systems and other RF applications.

• Features

  HAT1026R-EL-E is a 10 Gbps InGaAs PIN photodiode designed for high-speed optical communication systems. It features low dark current, large responsivity, wide bandwidth, and high linearity, making it suitable for applications such as fiber optic communication, data transmission, and optical testing.

• Pinout

  The HAT1026R-EL-E is a high-frequency, high-power SPDT switch. It has a pin count of 6 pins (3 pins on each side) and is commonly used for applications that require signal switching, RF amplification, and routing.

• Manufacturer

  The manufacturer of the HAT1026R-EL-E is Critical Link, LLC. It is a company that specializes in providing embedded electronic solutions, including system-on-modules, imaging platforms, and FPGA development tools. They offer a range of products and services to meet customer needs in various industries such as aerospace, defense, medical, and industrial applications.

• Application Field

  The HAT1026R-EL-E is a power amplifier that can be used in various applications such as WiFi routers, access points, and small cell base stations. It provides high efficiency and performance, making it suitable for wireless communication systems requiring amplification of RF signals in the 2.4 GHz frequency band.

• Package

  The HAT1026R-EL-E chip has a package type of QFN, a form factor with 16 pins, and a compact size of 3mm x 3mm.