Renesas 2SK2225-E

Part points

• The 2SK2225-E chip is a semiconductor device used for amplification and switching applications in electronic devices. It is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a maximum voltage rating of 600V and a maximum current rating of 5A. The chip is designed to provide high performance and reliability in various industrial and consumer electronics applications.

• Equivalent

  There are no direct equivalent products to the 2SK2225-E chip. However, alternative power MOSFETs such as the IRFP250N and STP60NF06L can be used as substitutes depending on specific circuit requirements and performance considerations.

• Features

  The 2SK2225-E is a power MOSFET transistor with a Vdss (Drain-Source Voltage) of 800V and Id (Drain Current) of 7A. It has a low on-resistance (Rds on) of 1.6ohms and is suitable for various applications such as power supplies, inverters, and motor control systems.

• Pinout

  The 2SK2225-E is a MOSFET transistor with a pin count of 3. The pins are Gate (G), Drain (D), and Source (S). The Gate pin is used to control the flow of current between the Drain and Source pins.

• Manufacturer

  Toshiba Corporation is the manufacturer of the 2SK2225-E. Toshiba is a multinational conglomerate company based in Japan with a diverse range of products, including semiconductors, home appliances, and electronic devices.

• Application Field

  The 2SK2225-E is a power MOSFET transistor used in applications that require high voltage and current handling capabilities. It is commonly utilized in power amplifiers, switching power supplies, motor control circuits, and other high-power electronic applications.

• Package

  The 2SK2225-E chip comes in a TO-220F package type. It has a through-hole form with three pins. The package size is compact, measuring approximately 10.16 mm (0.4 inches) in length, 4.83 mm (0.19 inches) in width, and 9.65 mm (0.38 inches) in height.