Pedidos acima de
$5000ON 2N5190G
Bipolar Junction Transistors
Marcas: Onsemi
Parte do fabricante #: 2N5190G
Ficha de dados: 2N5190G Datasheet (PDF)
Pacote/Caso: TO-225-3
Tipo de Produto: Single Bipolar Transistors
Status RoHS:
Condição de estoque: 3.343 peças, novo original
Warranty: 1 Year Ovaga Warranty - Find Out More
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2N5190G Descrição geral
The 2N5190G is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It belongs to the NPN (negative-positive-negative) transistor family, meaning it conducts when a small current flows into its base.Its key specifications include a maximum collector current (Ic) of 1A, a maximum collector-emitter voltage (Vce) of 80V, and a power dissipation (Pd) of 800mW. These parameters determine the transistor's capability to handle current and voltage without damage.The transistor comes in a TO-92 package, a common small-sized package suitable for various electronic circuits. Its compact size makes it versatile and easy to integrate into different electronic designs.The 2N5190G's gain bandwidth product (ft) is typically 150MHz, indicating its suitability for applications requiring moderate-frequency amplification.This transistor offers high current gain (hFE) ranging from 60 to 150, providing efficient signal amplification in a wide range of applications.
Características
- This NPN transistor features excellent temperature stability
- It can withstand high temperatures up to 150°C
- The transistor's low input impedance ensures efficient operation
- Its high-frequency performance is also noteworthy
Aplicativo
- High-power transistor for RF applications
- Perfect for audio amplifier stages
- Ideal for transmitter and receiver systems
Especificações
Parâmetro | Valor | Parâmetro | Valor |
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Status | Active | Compliance | PbAHP |
Package Type | TO-225-3 | Case Outline | 77-09 |
MSL Type | NA | MSL Temp (°C) | 0 |
Container Type | BLKBX | Container Qty. | 500 |
ON Target | N | Polarity | NPN |
Type | General Purpose | VCE(sat) Max (V) | 0.6 |
IC Cont. (A) | 4 | VCEO Min (V) | 40 |
VCBO (V) | 40 | VEBO (V) | 5 |
VBE(on) (V) | 1.2 | hFE Min | 25 |
hFE Max | 100 | fT Min (MHz) | 2 |
PTM Max (W) | 40 |
Envio
Tipo de envio | Taxa de envio | Tempo de espera | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
FedEx | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 dias | |
CORREIO AÉREO REGISTADO | $20.00-$40.00 (0.50 KG) | 2-5 dias |
Tempo de processamento: A taxa de envio depende de diferentes zonas e países.
Pagamento
Termos de pagamento | Taxa de mão | |
---|---|---|
Transferência bancária | cobrar taxa bancária de US$ 30,00. | |
PayPal | cobrar taxa de serviço de 4,0%. | |
Cartão de crédito | cobrar taxa de serviço de 3,5%. | |
Western Union | charge US.00 banking fee. | |
Grama de dinheiro | cobrar taxa bancária de US$ 0,00. |
Garantias
1.Os componentes eletrônicos que você compra incluem garantia de 365 dias, garantimos a qualidade do produto.
2. se alguns dos itens que você recebeu não forem de qualidade perfeita, providenciaremos seu reembolso ou substituição com responsabilidade. Mas os itens devem permanecer em sua condição original.
Embalagem
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Iremos inspecionar todas as mercadorias antes do envio, garantir que todos os produtos estejam em boas condições e garantir que as peças sejam novas folhas de dados originais.
Depois que todas as mercadorias forem garantidas sem problemas na pós-embalagem, embalaremos com segurança e enviaremos por expresso global. Apresenta excelente resistência a perfurações e rasgos, além de boa integridade de vedação.
Part points
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The 2N5190G is a high-frequency NPN transistor chip designed for use in RF and microwave applications. It offers a high power gain, low noise figure, and high reliability. The chip is commonly used in wireless communication systems, radar systems, and amplifiers where high-frequency performance is required.
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Features
The 2N5190G is a bipolar general-purpose transistor with a maximum collector current of 800 mA. It has a low saturation voltage of 0.25V, high current gain, and is designed for switching applications. It operates at a maximum power dissipation of 800 mW and is housed in a TO-92 package. -
Pinout
The 2N5190G is a transistor that has 3 pins. The function of the pins on the 2N5190G are as follows: Pin 1 is the base, Pin 2 is the collector, and Pin 3 is the emitter. -
Manufacturer
2N5190G is manufactured by ON Semiconductor. ON Semiconductor is a semiconductor manufacturing company that specializes in power management, analog, logic, mixed-signal, and discrete devices. They design, produce, and distribute a wide range of semiconductor components used in various industries such as automotive, industrial, consumer electronics, and more. -
Application Field
The 2N5190G is a general-purpose NPN bipolar transistor mainly used in various low-power amplification and switching applications. It can be found in audio amplifiers, small signal amplifiers, oscillator circuits, and general-purpose switching circuits. -
Package
The 2N5190G chip comes in a TO-92 package, which is commonly used for discrete semiconductors. This package has three leads (pins) and a small size, measuring approximately 4.45mm x 4.45mm x 4.32mm.
Ficha de dados PDF
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