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TO-251-3
(65 partes no total)| Número da peça do fabricante | Descrição | Fabricante | Em estoque | Operação |
|---|---|---|---|---|
| IRFU120 | N-Channel MOSFET Transistor, TO-251AA Package | Vishay | 9.458 | Add to BOM |
| IRLU024NPBF | Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) IPAK Tube | Infineon | 9.458 | Add to BOM |
| VND7NV04-1-E | OMNIFET II Power MOSFET Driver | Stmicroelectronics | 2.203 | Add to BOM |
| RFD8P05 | TO-251AA Power P-Ch MOSFET | Onsemi | 6.582 | Add to BOM |
| IRLU9343PBF | MOSFET PLANAR 40-100V | Infineon Technologies | 7.223 | Add to BOM |
| RFD15P05 | P-Channel Power MOSFET TO-251AA | Onsemi | 5.459 | Add to BOM |
| IRLU8726PBF | Heavy-duty power transistor for reliable performance | Infineon | 6.807 | Add to BOM |
| FDU6N25 | High-voltage power management for demanding application | onsemi | 9.458 | Add to BOM |
| FQU13N06LTU | N-Channel 60 V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK | onsemi | 9.458 | Add to BOM |
| FQU17P06 | Voltage rating of -60V | Onsemi | 9.787 | Add to BOM |
| SJ6006VTP | SJ Tube Through Hole Sensitive Gate SCR | Littelfuse | 9.458 | Add to BOM |
| IRLU8729PBF | 3-Pin IPAK Transistor Infineon | Infineon | 9.316 | Add to BOM |
| IRFUC20 | TO-251 IPAK-3 Power FET: 2A I(D), 600V, 4.4ohm, N-Channel Silicon, Metal-oxide Semiconductor | Vishay | 9.144 | Add to BOM |
| IRFU310PBF | MOSFET N-Chan 400V 1.7 Amp | VISHAY INTERTECHNOLOGY INC | 7.684 | Add to BOM |
| IRFU110PBF | N-Channel 100 V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA | Vishay | 9.458 | Add to BOM |
| IRFU020 | Transistor IRFU020, N-channel MOSFET, 60V, 14A, 3-pin IPAK package | Vishay | 9.458 | Add to BOM |
| STU6N62K3 | N-Channel 620 V 5.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK) | STMicroelectronics | 9.458 | Add to BOM |
| STD5NK40Z-1 | N-Channel 400 V 3A (Tc) 45W (Tc) Through Hole TO-251 (IPAK) | STMicroelectronics | 9.458 | Add to BOM |
| STD4NK80Z-1 | MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A | STMicroelectronics | 9.458 | Add to BOM |
| IRLU2905PBF | Trans MOSFET N-CH Si 55V 42A 3-Pin(3+Tab) IPAK Tube | Infineon | 9.458 | Add to BOM |
| IRFU5505PBF | Trans MOSFET P-CH 55V 18A 3-Pin(3+Tab) IPAK Tube | Infineon | 9.458 | Add to BOM |
| STD10PF06-1 | Transistor MOSFET P-Channel with 60V rating and 10A capacity in IPAK package | STMicroelectronics | 9.458 | Add to BOM |
| RFD12N06RLE | channel Logic Level MOSFET with 60V and 12A rating | onsemi | 8.011 | Add to BOM |
| IRLU3705ZPBF | 150Ohm impedance in a 4-SMD package | Infineon | 9.458 | Add to BOM |
| IRLU8721PBF | MOSFET with 30 volts and 65 amperes capability, featuring a gate charge of 8.5 nanocoulombs and a low on-resistance of 8.4 milliohms | Infineon | 9.458 | Add to BOM |
| IRFU9120NPBF | -100V P-Channel MOSFET capable of handling up to -6.5A of current with a low on-resistance of 480mOhm and total gate charge of 18nC | Infineon | 9.458 | Add to BOM |
| 2SK3635 | TO-251AA, MP-3, 3 PIN | renesas | 7.504 | Add to BOM |
| STD5NM60-1 | 600V 5A N-Channel MOSFET with a low on-state resistance of 1Ω | STMicroelectronics | 9.458 | Add to BOM |
| IPS50R520CP | High-voltage, high-current device for demanding syste | Infineon | 9.458 | Add to BOM |
| AUIRFU8405 | AUIRFU8405: High-current MOSFET with low on-resistance | Infineon | 9.458 | Add to BOM |
| IRLU120NPBF | IRLU120NPBF N-channel power MOSFET | Infineon | 9.458 | Add to BOM |
| STU3N62K3 | N-Channel 620 V 2.7A (Tc) 45W (Tc) Through Hole IPAK | STMicroelectronics | 9.458 | Add to BOM |
| IRFU220NPBF | Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube | Infineon | 9.458 | Add to BOM |
| RFD14N05 | Power N-channel MOSFET TO-251AA | Onsemi | 9.358 | Add to BOM |
| 2SK3712 | Small Signal Field-Effect Transistor, 9A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN | Renesas Electronics | 9.458 | Add to BOM |
| RFD16N05 | Trans MOSFET N-CH Si 50V 16A 3-Pin(3+Tab) TO-251 Rail | onsemi | 6.993 | Add to BOM |
| STU60N3LH5 | N-Channel 30 V 48A (Tc) 60W (Tc) Through Hole IPAK | STMicroelectronics | 9.458 | Add to BOM |
| STU9HN65M2 | Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) IPAK Tube | STMicroelectronics | 9.458 | Add to BOM |
| IRFU9014 | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Vishay | 8.321 | Add to BOM |
| IRFU214 | N-Channel 250 V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA | Vishay | 5.627 | Add to BOM |
| IRLU120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | Vishay | 9.130 | Add to BOM |
| IRFU9210 | P-Channel 200 V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA | Vishay | 7.461 | Add to BOM |
| IRFU9110 | 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | Vishay | 6.112 | Add to BOM |
| IRFU1N60A | Trans MOSFET N-CH 600V 1.4A 3-Pin(3+Tab) IPAK | Vishay | 8.784 | Add to BOM |
| S6010V | SCR 600 V 10 A Standard Recovery Through Hole TO-251 (V-Pak/I-Pak) | Littelfuse | 7.919 | Add to BOM |
| 2SD1815T-E | NPN bipolar junction transistor ideal for audio, motor control, and switching applications | Onsemi | 7.108 | Add to BOM |
| 2SK3482-AZ | N-Channel 100 V 36A (Ta) 1W (Ta), 50W (Tc) Through Hole TO-251 | Renesas Electronics | 9.458 | Add to BOM |
| DMT10H009LH3 | MOSFET MOSFET BVDSS 61V-100V | Diodes Incorporated | 9.458 | Add to BOM |
| IPU60R1K5CE | MOSFET CONSUMER | Infineon Technologies Corporation | 3.507 | Add to BOM |
| TK5Q60W,S1VQ | N-Channel 600 V 5.4A (Ta) 60W (Tc) Through Hole I-Pak | Toshiba | 9.458 | Add to BOM |
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